High Reliability NH MBR40L100CT Low Vf Schottky Barrier Rectifier for Automotive Electronics
Key Attributes
Model Number:
MBR40L100CT
Product Custom Attributes
Reverse Leakage Current (Ir):
120uA@100V
Non-Repetitive Peak Forward Surge Current:
250A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
850mV@20A
Current - Rectified:
40A
Mfr. Part #:
MBR40L100CT
Package:
TO-220-3L
Product Description
Product Overview
The MBR40L100CT by Niuhang Electronic Specification Technology Co., Ltd. is a Low Vf Schottky Barrier Rectifier designed for high-efficiency applications. Leveraging NH'S Low Vf Schottky Barrier Chip Technology, it offers a super low forward voltage drop and low power loss, contributing to high reliability and fast switching speeds. Ideal for Switch Mode Power Supplies (SMPS), fast chargers, LED drivers, and automotive electronics.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd.
- Model: MBR40L100CT
- Technology: Low Vf Schottky Barrier Chip
- Certifications: RoHS-Compliant, HF halogen-free, Pb-Free
- Package: TO-220AB
- Material: Molded with UL-94 ClassV-0 Recognized material
- Terminals: Tin Plated Leads
- Origin: China (implied by company name and datasheet format)
Technical Specifications
| Parameter | Test Conditions | Symbol | Ratings | Unit |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | |
| Maximum RMS Voltage | VRMS | 70 | V | |
| Maximum DC Blocking Voltage | VDC | 100 | V | |
| Maximum Average Forward Rectified Current (Per Diode) | IF(AV) | 20 | A | |
| Maximum Average Forward Rectified Current (Total device) | IF(AV) | 40 | A | |
| Peak Forward Surge Current (Per Diode) | 8.3ms Single Half Sine-wave | IFSM | 250 | A |
| Current Squared Time (Per Diode) | t< 8.3ms | I2t | 259.4 | Asec |
| Maximum Mounting Torque | M3 screw | TMM | 1.1 | N.m |
| Instaneous Forward Voltage (Per Diode) | Ta=25, IF= 20.0 A | VF | 0.76 | V |
| Instaneous Forward Voltage (Per Diode) | Ta=100, IF= 20.0 A | VF | 0.7 | V |
| Instaneous Forward Voltage (Per Diode) | Ta=100, IF= 20.0 A | VF | 0.85 | V |
| Instaneous Forward Voltage (Per Diode) | Ta=100, IF= 20.0 A | VF | 0.75 | V |
| Maximum DC Reverse Current (at Rated DC Blocking Voltage) | Ta=25, VR=VRRM | IRRM | 30 | uA |
| Maximum DC Reverse Current (at Rated DC Blocking Voltage) | Ta=25, VR=VRRM | IRRM | 120 | uA |
| Maximum DC Reverse Current (at Rated DC Blocking Voltage) | Ta=100, VR=VRRM*80% | IRRM | 2 | mA |
| Maximum DC Reverse Current (at Rated DC Blocking Voltage) | Ta=100, VR=VRRM*80% | IRRM | 18 | mA |
| Typical Junction Capacitance (Per Diode) | 4 V,1MHz | CJ | 950 | pF |
| Maximum Reverse Recovery Time | IF=0.5A, IR=1.0A, IRR=0.25A | Trr | 35 | nS |
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Storage Temperature Range | TSTD | -55 to 150 | ||
| Thermal Resistance (Junction To Ambient) | Still Air Environment, With Steady-State, With Ta=25 | RJA | 62.5 | /W |
| Thermal Resistance (Junction-Case) | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat., With Steady-State | RJC | 2.0 | /W |
2508201745_NH-MBR40L100CT_C7428087.pdf
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