Schottky Rectifier NH HBR20200P5 Metal Silicon Junction for Low Voltage High Frequency Applications
Product Overview
The HBR20200P5 is a Schottky rectifier from Niu Hang Specification Electronic Co. Ltd, featuring metal silicon junction and majority carrier conduction for low power loss and high reliability. It offers high forward surge capability and high-frequency operation, making it suitable for low voltage, high-frequency inverters, DC/DC converters, freewheeling, and polarity protection applications.
Product Attributes
- Brand: Niu Hang (NH trademark)
- Model: HBR20200P5
- Package: PDFN5*6
- Terminals: Lead solderable per J-STD-002 and JESD22-B102
- Mounting Torque: 10 in-Ibs maximum
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Maximum average forward rectified current | IF(AV) | Ta=25 | 10.0 | A | ||
| Peak forward surge current | IFSM | 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) | 200 | A | ||
| Current Squared Time Per Diode | I2t | t<8.3ms | 20.0 | A2sec | ||
| Maximum repetitive peak reverse voltage | VRRM | 200 | V | |||
| Maximum RMS voltage | VRMS | Ta=25 | 140 | V | ||
| Maximum DC blocking voltage | VDC | 200 | V | |||
| Maximum instantaneous forward voltage | VF | IF= 20.0 A (Note 1) | 0.85 | 0.94 | V | |
| Maximum instantaneous reversecurrent at rated DC blockingvoltage | IRRM | VR= VRRM (Note 1) | 1.0 | mA | ||
| Typical junction capacitance | CJ | 4V,1MHz | 175 | pF | ||
| Operating junction and storage temperature range | TJ, TSTG | -65 | 175 | |||
| Storage temperature range | TSTG | -65 | 175 | |||
| Thermal Characteristics | ||||||
| Typical thermal resistance (Note 2) | RJA | Ta=125 | 35 | /W | ||
| Typical thermal resistance (Note 2) | RJL | Tc=25 | 10 | /W | ||
2410121747_NH-HBR20200P5_C7428008.pdf
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