switching ORIENTAL SEMI OSG60R108KZF MOSFET with fast recovery diode and charge balance technology
Key Attributes
Model Number:
OSG60R108KZF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
30A
RDS(on):
108mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.6745nF
Pd - Power Dissipation:
101W
Gate Charge(Qg):
37.1nC@10V
Mfr. Part #:
OSG60R108KZF
Package:
TO-263
Product Description
Product Overview
The OSG60R108KZF is a GreenMOS high voltage N-Channel Power MOSFET from Oriental Semiconductor, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This series is integrated with a fast recovery diode (FRD) to minimize reverse recovery time, making it ideal for resonant switching topologies that demand higher efficiency, reliability, and a smaller form factor. It offers minimized conduction loss, superior switching performance, and robust avalanche capability, suitable for applications in PC power, telecom power, server power, EV chargers, and motor drivers.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS Z series
- Technology: Charge Balance Technology
- Diode Integration: Fast Recovery Diode (FRD)
- Package Marking: OSG60R108KZ
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| Key Performance Parameters | |||||
| Drain-source voltage (min @ Tj(max)) | VDS | 650 | V | ||
| Pulsed drain current | ID, pulse | 90 | A | ||
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON) | 108 | m | ||
| Total gate charge | Qg | 37.1 | nC | ||
| Absolute Maximum Ratings | |||||
| Drain-source voltage | VDS | 600 | V | Tj=25C unless otherwise noted | |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted | |
| Continuous drain current (TC=25 C) | ID | 30 | A | 1) TC=25 C | |
| Continuous drain current (TC=100 C) | ID | 19 | A | 1) TC=100 C | |
| Pulsed drain current (TC=25 C) | ID, pulse | 90 | A | 2) TC=25 C | |
| Continuous diode forward current (TC=25 C) | IS | 30 | A | 1) TC=25 C | |
| Diode pulsed current (TC=25 C) | IS, pulse | 90 | A | 2) TC=25 C | |
| Power dissipation (TC=25 C) | PD | 101 | W | 3) TC=25 C | |
| Single pulsed avalanche energy (EAS) | EAS | 1000 | mJ | 5) VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 C | |
| MOSFET dv/dt ruggedness (VDS=0480 V) | dv/dt | 50 | V/ns | ||
| Reverse diode dv/dt (VDS=0480 V, ISDID) | dv/dt | 50 | V/ns | ||
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | ||
| Thermal Characteristics | |||||
| Thermal resistance, junction-case | RJC | 1.24 | C/W | ||
| Thermal resistance, junction-ambient | RJA | 62 | C/W | 4) Measured with device mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C | |
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=1 mA | |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=1 mA, Tj=150 C | |
| Gate threshold voltage | VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=1 mA |
| Drain-source on-state resistance | RDS(ON) | 0.085 | 0.108 | VGS=10 V, ID=15 A | |
| Drain-source on-state resistance | RDS(ON) | 0.2 | VGS=10 V, ID=15 A, Tj=150 C | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-30 V | |
| Drain-source leakage current | IDSS | 10 | A | VDS=600 V, VGS=0 V | |
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 2674.5 | pF | VGS=0 V, VDS=50 V, =100 KHz | |
| Output capacitance | Coss | 246.0 | pF | VGS=0 V, VDS=50 V, =100 KHz | |
| Reverse transfer capacitance | Crss | 9.6 | pF | VGS=0 V, VDS=50 V, =100 KHz | |
| Turn-on delay time | td(on) | 67.4 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=16 A | |
| Rise time | tr | 71.1 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=16 A | |
| Turn-off delay time | td(off) | 103.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=16 A | |
| Fall time | tf | 33.4 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=16 A | |
| Gate Charge Characteristics | |||||
| Total gate charge | Qg | 37.1 | nC | VGS=10 V, VDS=400 V, ID=16 A | |
| Gate-source charge | Qgs | 11.0 | nC | VGS=10 V, VDS=400 V, ID=16 A | |
| Gate-drain charge | Qgd | 13.8 | nC | VGS=10 V, VDS=400 V, ID=16 A | |
| Gate plateau voltage | Vplateau | 6.7 | V | VGS=10 V, VDS=400 V, ID=16 A | |
| Body Diode Characteristics | |||||
| Diode forward voltage | VSD | 1.4 | V | IS=30 A, VGS=0 V | |
| Reverse recovery time | trr | 123.0 | ns | IS=16 A, di/dt=100 A/s | |
| Reverse recovery charge | Qrr | 0.73 | uC | IS=16 A, di/dt=100 A/s | |
| Peak reverse recovery current | Irrm | 11.0 | A | IS=16 A, di/dt=100 A/s | |
| Package Information (TO263-P) | |||||
| Dimension A | 4.37 - 4.77 | mm | |||
| Dimension A1 | 1.22 - 1.42 | mm | |||
| Dimension A2 | 2.49 - 2.89 | mm | |||
| Dimension A3 | 0.00 - 0.25 | mm | |||
| Dimension b | 0.70 - 0.96 | mm | |||
| Dimension b1 | 1.17 - 1.47 | mm | |||
| Dimension c | 0.30 - 0.53 | mm | |||
| Dimension D1 | 8.50 - 8.90 | mm | |||
| Dimension D4 | 6.60 | mm | |||
| Dimension E | 9.86 - 10.36 | mm | |||
| Dimension E5 | 7.06 | mm | |||
| Dimension e | 2.54 BSC | mm | |||
| Dimension H | 14.70 - 15.50 | mm | |||
| Dimension H2 | 1.07 - 1.47 | mm | |||
| Dimension L | 2.00 - 2.60 | mm | |||
| Dimension L1 | 1.40 - 1.70 | mm | |||
| Dimension L4 | 0.25 BSC | mm | |||
| Dimension | 0 - 9 | ||||
| Ordering Information | |||||
| Package Type | TO263-P | ||||
| Units/Reel | 800 | ||||
| Reels/Inner Box | 1 | ||||
| Units/Inner Box | 800 | ||||
| Inner Boxes/Carton Box | 5 | ||||
| Units/Carton Box | 4000 | ||||
2411192330_ORIENTAL-SEMI-OSG60R108KZF_C5175403.pdf
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