86--136 6733 2386
quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R06PF with Low RDS ON and Fast Switching factory
quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R06PF with Low RDS ON and Fast Switching factory

Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R06PF with Low RDS ON and Fast Switching

Key Attributes
Model Number: SFS06R06PF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10.6pF
Number:
-
Output Capacitance(Coss):
332pF
Input Capacitance(Ciss):
2.136nF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SFS06R06PF
Package:
TO-220
Product Description

Product Overview

The SFS06R06PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed with unique device technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: FSMOS MOSFET
  • Package Marking: SFS06R06P
  • RoHS Compliant: Yes
  • Pb Free: Yes
  • Halogen Free: Yes

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage (min @ Tj(max)) VDS, min 60 V
Pulsed drain current ID, pulse 210 A
Drain-source on-state resistance (max @ VGS=10V) RDS(ON) max 6 m VGS=10V
Total gate charge Qg 30 nC VGS=10 V, VDS=50 V, ID=25 A
Drain source voltage VDS 60 V Tj=25C
Gate source voltage VGS 20 V Tj=25C
Continuous drain current (TC=25 C) ID 70 A TC=25 C
Pulsed drain current (TC=25 C) ID, pulse 210 A TC=25 C
Continuous diode forward current (TC=25 C) IS 70 A TC=25 C
Diode pulsed current (TC=25 C) IS, Pulse 210 A TC=25 C
Power dissipation (TC=25 C) PD 87 W TC=25 C
Single pulsed avalanche energy (EAS) EAS 66 mJ VDD=30 V, VGS=10 V, L=0.3 mH, starting Tj=25 C
Operation and storage temperature TstgTj -55 to 150 C
Thermal resistance, junction-case RJC 1.44 C/W
Thermal resistance, junction-ambient RJA 62 C/W Mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C
Drain-source breakdown voltage BVDSS 60 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 4.7 - 6 m VGS=10 V, ID=20 A
Drain-source on-state resistance RDS(ON) 6.4 - 10 m VGS=4.5 V, ID=10 A
Gate-source leakage current IGSS 100 nA VGS=20 V
Drain-source leakage current IDSS 1 A VDS=60 V, VGS=0 V
Input capacitance Ciss 2136 pF VGS=0 V, VDS=50 V, =100 kHz
Output capacitance Coss 332 pF VGS=0 V, VDS=50 V, =100 kHz
Reverse transfer capacitance Crss 10.6 pF VGS=0 V, VDS=50 V, =100 kHz
Turn-on delay time td(on) 22.9 ns VGS=10 V, VDS=50 V, RG=2 , ID=25 A
Rise time tr 6.5 ns VGS=10 V, VDS=50 V, RG=2 , ID=25 A
Turn-off delay time td(off) 45.7 ns VGS=10 V, VDS=50 V, RG=2 , ID=25 A
Fall time tf 20.4 ns VGS=10 V, VDS=50 V, RG=2 , ID=25 A
Total gate charge Qg 30 nC VGS=10 V, VDS=50 V, ID=25 A
Gate-source charge Qgs 5.8 nC VGS=10 V, VDS=50 V, ID=25 A
Gate-drain charge Qgd 6.1 nC VGS=10 V, VDS=50 V, ID=25 A
Gate plateau voltage Vplateau 3.6 V VGS=10 V, VDS=50 V, ID=25 A
Diode forward voltage VSD 1.3 V IS=20 A, VGS=0 V
Reverse recovery time trr 50.3 ns VR=50 V, IS=25 A, di/dt=100 A/s
Reverse recovery charge Qrr 45.1 nC VR=50 V, IS=25 A, di/dt=100 A/s
Peak reverse recovery current Irrm 1.5 A VR=50 V, IS=25 A, di/dt=100 A/s
Package Type TO220-J

2103242012_ORIENTAL-SEMI-SFS06R06PF_C2762915.pdf

Related Products
quality High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant factory
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
quality Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits factory
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.