Durable OSEN IRFP460PBF MOSFET featuring improved dvdt capability and high input impedance for power supplies
Key Attributes
Model Number:
IRFP460PBF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
230mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Output Capacitance(Coss):
3.21nF
Pd - Power Dissipation:
240W
Input Capacitance(Ciss):
3.21nF@25V
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
IRFP460PBF
Package:
TO-247S
Product Description
Product Overview
The IRFP460PBF is a 500V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: [IRFP460PBF]
- Revision: 21.2.10
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 500 | V | |
| Gate-Source Voltage-Continuous | VGS | ±30 | V | |
| Drain Current-Continuous (Note 2) | ID | 20 | A | |
| Drain Current-Single Pulsed (Note 1) | IDM | 80 | A | |
| Power Dissipation (Note 2) | PD | 240 | W | |
| Max.Operating junction temperature | Tj | 150 | °C | |
| Electrical Characteristics | ||||
| Static Characteristics | ||||
| Drain-Source Breakdown Voltage (Note 1) | BVDSS | 500 | V | ID=250µA, VGS=0V, TJ=25°C |
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS=VGS, ID=250µA |
| Drain-Source On-Resistance | RDS(on) | 0.23 | Ω | VGS=10V, ID=1A |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0 |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=500V, VGS=0 |
| Forward Transconductance | gfs | 25 | S | VDS=40V, ID=10A |
| Switching Characteristics | ||||
| Turn-On Delay Time | Td(on) | 95 | ns | VDS=250V, ID=20A, RG=25Ω(Note 2) |
| Rise Time | Tr | 370 | ns | |
| Turn-Off Delay Time | Td(off) | 110 | ns | |
| Fall Time | Tf | 100 | ns | |
| Total Gate Charge | Qg | 45 | nC | VDS=480V, VGS=10V, ID=20A(Note 2) |
| Gate-Source Charge | Qgs | 8.5 | nC | |
| Gate-Drain Charge | Qgd | 18.5 | nC | |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 2200 | pF | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance | Coss | 340 | pF | |
| Reverse Transfer Capacitance | Crss | 27 | pF | |
| Continuous Drain-Source Diode Forward Current (Note 2) | IS | 20 | A | |
| Diode Forward On-Voltage | VSD | 1.4 | V | IS=10A, VGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.52 | °C/W | |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%.
2410121732_OSEN-IRFP460PBF_C34373760.pdf
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