N channel MOSFET OSEN OSD7N65 650V designed for power supplies and rugged electronic applications
Key Attributes
Model Number:
OSD7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Input Capacitance(Ciss):
1.69nF
Pd - Power Dissipation:
38W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
OSD7N65
Package:
TO-252
Product Description
OSD7N65 650V N-CHANNEL MOSFET
The OSD7N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch-mode power supplies, power factor correction circuits, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameters | Unit | Conditions | Ratings |
| VDSS | Drain-Source Voltage | V | - | 650 |
| VGS | Gate-Source Voltage-Continuous | V | - | 30 |
| ID | Drain Current-Continuous (Note 2) | A | Tc=25C | 7 |
| IDM | Drain Current-Single Pulsed (Note 1) | A | - | 28 |
| PD | Power Dissipation (Note 2) | W | Tc=25C | 38 |
| Tj Max. | Operating junction temperature | - | 150 | |
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250A, VGS=0V, TJ=25C | 650 |
| VGS(th) | Gate Threshold Voltage | V | VDS=VGS, ID=250A | 2.0 - 4.0 |
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=3.5A | 1.1 (Typ) | |
| IGSS | Gate-Body Leakage Current | nA | VGS=30V, VDS=0 | 100 |
| IDSS | Zero Gate Voltage Drain Current | A | VDS=650V, VGS=0 | 1 (Max) |
| gfs | Forward Transconductance | S | VDS=15V, ID=2.0A | 2.3 (Min) |
| Td(on) | Turn-On Delay Time | ns | VDS=325V, ID=7A, RG=25 (Note 2) | 48 - 80 |
| Tr | Rise Time | ns | VDS=325V, ID=7A, RG=25 (Note 2) | 135 - 170 |
| Td(off) | Turn-Off Delay Time | ns | VDS=325V, ID=7A, RG=25 (Note 2) | 135 - 175 |
| Tf | Fall Time | ns | VDS=325V, ID=7A, RG=25 (Note 2) | 280 - 320 |
| Qg | Total Gate Charge | nC | VDS=520V, VGS=10V, ID=7A (Note 2) | 30 - 65 |
| Qgs | Gate-Source Charge | nC | VDS=520V, VGS=10V, ID=7A (Note 2) | 6.5 (Typ) |
| Qgd | Gate-Drain Charge | nC | VDS=520V, VGS=10V, ID=7A (Note 2) | 13.5 (Typ) |
| Ciss | Input Capacitance | pF | VDS=25V, VGS=0, f=1MHz | 1080 - 1690 |
| Coss | Output Capacitance | pF | VDS=25V, VGS=0, f=1MHz | 118 - 200 |
| Crss | Reverse Transfer Capacitance | pF | VDS=25V, VGS=0, f=1MHz | 30 - 45 |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | A | - | 7 |
| VSD | Diode Forward On-Voltage | V | IS=7A, VGS=0 | 1.4 (Max) |
| Rth(j-c) | Thermal Resistance, Junction to Case | /W | - | 3.3 (Max) |
Notes:
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us, duty cycle <= 2%.
2410121732_OSEN-OSD7N65_C20607782.pdf
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