High Surge Capability Schottky Rectifier NH MBR10200CT Suitable for Industrial Electronic Circuits

Key Attributes
Model Number: MBR10200CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
870mV@5A
Current - Rectified:
10A
Mfr. Part #:
MBR10200CT
Package:
TO-220AB
Product Description

Niu Hang MBR10200CT/FCT Schottky Barrier Rectifiers

The Niu Hang MBR10200CT and MBR10200FCT are high-efficiency Schottky Barrier Rectifiers designed for high-frequency applications. They feature low forward voltage drop, low power loss, high forward surge capability, and high frequency operation. These rectifiers are suitable for use in high frequency inverters, AC/DC converters, and LED drivers. They are RoHS 2011/65/EU compliant and feature plated leads solderable per MIL-STD-202, Method 208.

Product Attributes

  • Brand: Niu Hang (NH)
  • Origin: Niu Hang Specification Electronic Co. Ltd
  • Certifications: RoHS 2011/65/EU Compliant, Lead Free Finish
  • Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
  • Mounting Position: Any
  • Remark: Polarity: As marked; NH=niuhang trademark; FF=Product line code; YWW=Data code; EDDQK=Inernal code; MBR10200CT/FCT=Modle.

Technical Specifications

Parameter Symbol Test Conditions MBR10200CT MBR10200FCT Unit
Maximum repetitive peak reverse voltage VRRM 200 200 Volts
Maximum average forward rectified current IF(AV) (see fig.1) 10 10 A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM (JEDEC method at rated TL) 150 150 A
Typical junction capacitance CJ VR=1V, 10KHz 0.5 0.5 pF
Typical thermal resistance (note3) RJC TA=25 1.1 1.1 /W
Isolation voltage (TO-220F only) from terminals to heatsink t=1 min VISO -- 1500 VAC
Operating junction and Storage temperature range TJ, TSTD -55 to 150 -55 to 150
Maximum Mounting torque, M3 screw 0.87 0.87 N.m
Reverse current per diode IR TA=25 0.81 0.81 uA
Reverse current per diode IR TA=125 20 20 mA
Peak repetitive reverse current per diode at tp=2s 1KHz IRRM 80%*VRRM 1.1 1.1 mA
Instaneous forward voltage per diode VF IF=10A, TA=25 (note1) 0.75 0.75 V
Instaneous forward voltage per diode VF IF=10A, TA=125 (note1) 0.82 0.82 V

2410121819_NH-MBR10200CT_C7428029.pdf

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