N Channel Enhanced Shielded Gate Trench Power MOSFET NH NSH300N15P3 with Low Gate Charge and Low Switching Loss
Key Attributes
Model Number:
NSH300N15P3
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
29A
RDS(on):
30mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9.4pF@75V
Number:
1 N-channel
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
875pF@75V
Gate Charge(Qg):
12nC
Mfr. Part #:
NSH300N15P3
Package:
PDFN3x3-8
Product Description
Product Overview
The NSH300N15P3 is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. It features NH'S Advanced SGT Technology, offering low reverse transfer capacitances and low gate charge for reduced switching loss. This MOSFET is designed for applications requiring high efficiency, such as synchronous rectification, high-frequency circuits, motor drives, and automotive electronics. Its key performance indicator is the excellent Qg*Rds(on) product (FOM).
Product Attributes
- Brand: Niuhang
- Product Line: NSH
- Technology: Enhanced Shielded Gate Trench (SGT)
- Channel Type: N-Channel
- Certifications: RoHS COMPLIANT, Pb-Frce
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | ||
|---|---|---|---|---|---|---|---|---|
| Product Summary | ||||||||
| Drain-Source Voltage | Min.@Tj | VDS | 150 | V | ||||
| Continuous Drain Current | Min.@Ta | ID | 29.0 | A | ||||
| Drain-Source On Resistance | @10V | RDS(ON)(TYP) | 25.50 | m | ||||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Voltage | VDS | 150 | V | |||||
| Gate-Source Voltage | VGS | 20 | V | |||||
| Continuous Drain Current | Ta= 25 | ID | 29.0 | A | ||||
| Continuous Drain Current | Ta= 100 | ID | 18.6 | A | ||||
| Drain Current-Pulse | TJ< 150 | IDM | 116 | A | ||||
| Maximum Power Dissipation | Ta= 25 | PD | 52 | W | ||||
| Power Dissipation Derating Factor | Above 25 | DF | 0.42 | W/ | ||||
| Power Dissipation Derating Factor | Ta= 100 | DF | 21 | W/ | ||||
| Avalanche Current, Single Pulse | L= 0.5 mH | IAS | 2.5 | A | ||||
| Single Pulse Avalanche Energy | L= 0.5 mH | EAS | 1.6 | mJ | ||||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||||
| Junction Temperature | TJ | -55 | 150 | |||||
| Storage Temperature Range | TSTD | -55 | 150 | |||||
| Thermal Resistance Junction To Ambient | Still Air Environment | RJA | 50.0 | /W | ||||
| Thermal Resistance Junction-Case | Device Mounted On 1 in FR-4 Board With 2oz. Copper | RJC | 2.40 | /W | ||||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BVDSS | 150 | -- | -- | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BVDSS/TJ | -- | 0.17 | -- | V/ | ||
| Drain-Source Leakage Current | VDS= 150 V,VGS=0V | IDSS | -- | -- | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | IGSS | -- | -- | 100 | nA | ||
| Forward Transconductance | ID= 14.5 A,VDS= 5 V | gfs | -- | 29.0 | -- | S | ||
| Gate Threshold Voltage | VGS= VDS ID=250uA | VGS(TH) | 2.0 | 3.0 | 4.0 | V | ||
| Drain-Source On Resistance | ID= 14.5 A,VGS= 10.0 V | RDS(ON) | -- | 25.5 | 30.0 | m | ||
| Drain-Source On Resistance | ID= 14.5 A,VGS= 4.5 V | RDS(ON) | -- | 29.3 | 40.2 | m | ||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | Rg | -- | 1.7 | -- | |||
| Input Capacitance | VDS= 50 V | Ciss | -- | 875.0 | -- | pF | ||
| Output Capacitance | VGS= 0 V | Coss | -- | 134.0 | -- | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | Crss | -- | 9.4 | -- | pF | ||
| Turn-On Delay Time | VDS= 75 V | td(on) | -- | 12.8 | -- | ns | ||
| Turn-On Rise Time | VGS= 10.0 V | tr | -- | 3.0 | -- | ns | ||
| Turn-Off Delay Time | RG= 10.0 | td(off) | -- | 17.4 | -- | ns | ||
| Turn-Off Rise Time | tf | -- | 8.6 | -- | ns | |||
| Total Gate Charge | VDS= 75 V | Qg | -- | 12.0 | -- | nC | ||
| Gate-Source Charge | VGS= 10.0 V | Qgs | -- | 4.3 | -- | nC | ||
| Gate-Drain Charge | ID= 14.5 A | Qgd | -- | 2.0 | -- | nC | ||
| Max. Diode Forward Current | IS | -- | -- | 29.0 | A | |||
| Max. Pulsed Forward Current | ISM | -- | -- | 116.0 | A | |||
| Diode Forward Voltage | ID= 14.5 A,VGS=0V | VSD | -- | 0.86 | 1.55 | V | ||
| Reverse Recovery Time | IS= 14.5 A,di/dt= 100 A/us | trr | -- | 60.0 | -- | ns | ||
| Reverse Recovery Charge | VGS= 0.0 V | Qrr | -- | 103.0 | -- | nC | ||
| Reverse Recovery Current | IRRM | -- | 3.4 | -- | A | |||
| Outline Dimensions (PDFN3*3) | ||||||||
| Dimension | Millimeters | Inches | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | 2.80 | - | 3.60 | 0.1102 | - | 0.1417 | ||
| B | 2.70 | - | 3.50 | 0.1063 | - | 0.1378 | ||
| C | 3.00 | - | 3.80 | 0.1181 | - | 0.1496 | ||
| D | 0.55 | - | 1.05 | 0.0217 | - | 0.0413 | ||
| E | 0.15 | - | 0.45 | 0.0059 | - | 0.0177 | ||
| F | 0.40 | - | 0.90 | 0.0157 | - | 0.0354 | ||
| M | 1.50 | - | 2.10 | 0.0591 | - | 0.0827 | ||
| L | 2.30 | - | 2.90 | 0.0906 | - | 0.1142 | ||
| N | 0.45 | - | 0.95 | 0.0177 | - | 0.0374 | ||
| P | 0.20 | - | 0.60 | 0.0079 | - | 0.0236 | ||
| Recommended Layout Dimensions (PDFN3*3) | ||||||||
| Dimension | Millimeters | Inches | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | - | 3.55 | - | - | 0.1398 | - | ||
| B | - | 2.35 | - | - | 0.0925 | - | ||
| C | - | 0.60 | - | - | 0.0236 | - | ||
| D | - | 0.25 | - | - | 0.0098 | - | ||
| L | - | 0.65 | - | - | 0.0256 | - | ||
| M | - | 0.40 | - | - | 0.0157 | - | ||
| N | - | 2.80 | - | - | 0.1102 | - | ||
| Marking Information | ||||||||
| Model | NSH300N15P3 | |||||||
| Marking Example | NSH300N15 P3 FFYWW LLWWF | |||||||
| Packing Information | ||||||||
| Package Type | Package Code | Weight Approx(g/Pcs) | Package Method | Quantity (Pcs/Min. Pack.) | Quantity (Pcs/Inner Box) | Quantity (Pcs/Carton) | ||
| PDFN3*3 | P1 | 0.0198 | 13" Reel | 5000 | 10000 | 50000 | ||
2508281439_NH-NSH300N15P3_C46352557.pdf
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