High current handling OSEN IRF1404PBF 40V N Channel MOSFET with power dissipation rating of 220 watts

Key Attributes
Model Number: IRF1404PBF
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
RDS(on):
4.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Input Capacitance(Ciss):
4.5nF
Output Capacitance(Coss):
1.55nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
130nC@5V
Mfr. Part #:
IRF1404PBF
Package:
TO-220
Product Description

Product Overview

The IRF1404PBF is a 40V N-Channel MOSFET designed for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It features fast switching speeds, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. The device has undergone avalanche energy testing.

Product Attributes

  • Brand: OSEN
  • Model: IRF1404PBF
  • Package: TO-220
  • Publication Order Number: IRF1404PBF
  • Revision: 21.2.1

Technical Specifications

ParametersUnitRatingsConditions
Drain-Source Voltage (VDSS)V40
Gate-Source Voltage-Continuous (VGS)V20
Drain Current-Continuous (ID)A180Note 2
Drain Current-Single Pulsed (IDM)A720Note 1
Power Dissipation (PD)W220Note 2
Max.Operating junction temperature (Tj)150
Drain-Source Breakdown Voltage (BVDSS)V40ID=250AVGS=0VTJ=25C
Gate Threshold Voltage (VGS(th))V2.0 -- 4.0VDS=VGSID=250A
Drain-Source On-Resistance (RDS(on))m-- 4.6 --VGS=10VID=30A
Gate-Body Leakage Current (IGSS)nA-- -- 100VGS=16VVDS=0
Zero Gate Voltage Drain Current (IDSS)A-- -- 1VDS=40VVGS=0
Forward Transconductance (gfs)S45 -- --VDS=40VID=60A
Turn-On Delay Time (Td(on))ns-- 155 --VDD=20VID=60ARG=4,VGS=5VNote 2
Rise Time (Tr)ns-- 720 --
Turn-Off Delay Time (Td(off))ns-- 53 --
Fall Time (Tf)ns-- 55 --
Total Gate Charge (Qg)nC-- -- 130VD=32VGS=5VID=60ANote 2
Gate-Source Charge (Qgs)nC-- -- 30
Gate-Drain Charge (Qgd)nC-- -- 50
Input Capacitance (Ciss)pF-- 4500 --VDS=25VVGS=0f=1MHz
Output Capacitance (Coss)pF-- 1550 --
Reverse Transfer Capacitance (Crss)pF-- 150 --
Continuous Drain-Source Diode Forward Current (IS)A-- -- 180Note 2
Diode Forward On-Voltage (VSD)V-- -- 1.3IS=60AVGS=0
Thermal Resistance, Junction to Case (Rth(j-c))/W-- -- 0.57

Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us, duty cycle <= 2%.


2504101957_OSEN-IRF1404PBF_C47148320.pdf

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