N Channel MOSFET OSEN OSP160N03T with Fast Switching Speed and High Current Handling Capability
Key Attributes
Model Number:
OSP160N03T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
160A
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
745pF
Output Capacitance(Coss):
915pF
Pd - Power Dissipation:
145W
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
155nC@10V
Mfr. Part #:
OSP160N03T
Package:
TO-220AB
Product Description
Product Overview
The OSP160N03T is an N-Channel Enhancement Mode MOSFET from OSEN. It features fast switching speed, low gate charge, and high power and current handling capability, making it suitable for DC to DC converters and synchronous rectification applications. This product is RoHS compliant.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings (Tc=25C) | ||||||
| Drain-Source Voltage (VDSS) | V | 30 | ||||
| Gate-Source Voltage-Continuous (VGS) | V | 20 | ||||
| Drain Current-Continuous (ID) (Note 2) | A | 160 | ||||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 640 | ||||
| Power Dissipation (PD) (Note 2) | W | 145 | ||||
| Max.Operating junction temperature (Tj) | 150 | |||||
| Electrical characteristics (Tc=25C unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | ID=250AVGS=0V | 30 | -- | -- | |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 1.0 | 1.6 | 2.5 | |
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=15A | -- | 1.5 | 2.0 | |
| Gate-Body Leakage Current (IGSS) | nA | VGS=20VVDS=0 | -- | -- | 100 | |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=30VVGS=0 | -- | -- | 1 | |
| Forward Transconductance (gfs) | S | VDS=10VID=20A | -- | 45 | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time (Td(on)) | ns | VGS=10V, VDS=15V,ID=20A RG=3.5 | -- | 25 | -- | |
| Rise Time (Tr) | ns | -- | 15 | -- | ||
| Turn-Off Delay Time (Td(off)) | ns | -- | 55 | -- | ||
| Fall Time (Tf) | ns | -- | 12 | -- | ||
| Total Gate Charge (Qg) | nC | VDS=15V VGS=10V ID=20A | -- | 155 | -- | |
| Gate-Source Charge (Qgs) | nC | -- | 15 | -- | ||
| Gate-Drain Charge (Qgd) | nC | -- | 32 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | pF | VDS=20VVGS=0 f=1MHz | -- | 4500 | -- | |
| Output Capacitance (Coss) | pF | -- | 915 | -- | ||
| Reverse Transfer Capacitance (Crss) | pF | -- | 745 | -- | ||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 160 | ||
| Diode Forward On-Voltage (VSD) | V | IS=30AVGS=0 | -- | -- | 1.2 | |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 0.87 | ||
2410121755_OSEN-OSP160N03T_C22458654.pdf
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