650V N channel Enhancement MOSFET NH NPS20N65F Featuring TO 220F Package and High Reliability for Power
Key Attributes
Model Number:
NPS20N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.06nF@25V
Pd - Power Dissipation:
80W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
NPS20N65F
Package:
TO-220F
Product Description
NPS20N65F 650V N-channel Enhancement MOSFET
Product Overview
The NPS20N65F is a 650V N-channel Enhancement MOSFET from Niu Hang, designed for high-efficiency power applications. It features low RDS(ON), ultra-low gate charge, and is 100% UIS and RG tested. This MOSFET is suitable for use in adapters, PCs, PDs, chargers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its robust design and performance characteristics make it a reliable choice for demanding power conversion needs.
Product Attributes
- Brand: Niu Hang (NH)
- Product Line Code: FF
- Model: NPS20N65F
- Technology: N-channel Enhancement MOSFET
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BV DSS | 650 | - | - | V | VGS=0V,ID=250uA |
| Gate-Body Leakage Current | I GSS | - | - | 100 | nA | VGS=30V,VDS=0V |
| Gate Threshold Voltage | V GS(TH) | 2.0 | 3.0 | 4.0 | V | VDS=VGS,ID=800uA |
| Drain-Source On Resistance | R DS(ON) | - | 0.38 | 0.50 | m | VGS=10V,ID=10A |
| Input Capacitance | C iss | - | 3060 | - | pF | VDS=400V,VGS=0V, f=1000KHz |
| Output Capacitance | C oss | - | 250 | - | pF | VDS=25V,VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 18 | - | pF | VGS=0V, f=1.0MHz |
| Total Gate Charge | Q G | - | 60 | - | nC | VDS=520V,ID=20A, VGS=10V |
| Continuous Drain Current | ID | - | - | 20 | A | Note 1 |
| Pulsed Drain Current | IDM | - | - | 80 | A | Note 1 |
| Total Dissipation | PD | - | - | 80 | W | Tc=25 |
| Junction Temperature | TJ | -55 | - | 150 | - | |
| Storage Temperature Range | T STD | -55 | - | 150 | - | |
| Thermal Resistance Junction to Ambient | RJA | - | - | 80.0 | /W | - |
| Thermal Resistance Junction-Case | RJC | - | 1.6 | - | /W | - |
| Single Pulse Avalanche Energy | EAS | - | 1200 | - | mJ | Note 2 |
Typical Applications
- Adapter
- PC
- PD (Power Delivery)
- Charger
- Switched Mode Power Supplies (SMPS)
- Uninterruptible Power Supply (UPS)
Outline Dimensions (TO-220F)
| Dim. | Min. | Typ. | Max. | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Milimeters | Inches | |||||
| A | 10.00 | - | 10.50 | 0.39 | - | 0.41 |
| B | 15.40 | - | 16.20 | 0.61 | - | 0.64 |
| C | 6.48 | - | 6.88 | 0.26 | - | 0.27 |
| D | 4.50 | - | 4.90 | 0.18 | - | 0.19 |
| E | 2.35 | - | 2.75 | 0.09 | - | 0.11 |
| F | 12.50 | - | - | 0.49 | - | - |
| G | 2.40 | - | 3.00 | 0.09 | - | 0.12 |
| H | 0.40 | - | 0.60 | 0.02 | - | 0.02 |
| J | 2.20 | - | 4.20 | 0.09 | - | 0.17 |
| M | 2.40 | - | 2.70 | 0.09 | - | 0.11 |
| N | 0.80 | - | 1.10 | 0.03 | - | 0.04 |
| K | 1.20 | - | 1.50 | 0.05 | - | 0.06 |
| R | 0.60 | - | 1.00 | 0.02 | - | 0.04 |
| O | 3.10 | - | 3.70 | 0.12 | - | 0.15 |
| P | 3.00 | - | 4.00 | 0.12 | - | 0.16 |
Packing Information
| Package Method | Inner Box Size LWH(mm) | Quantity (pcs/box) | Box Package | Quantity (box/carton) | Carton Size LWH(mm) |
|---|---|---|---|---|---|
| TO-220F | 57015347 | 1000 | 5000 | - | 580250180 |
Soldering Recommendations
Recommended wave soldering condition:
- Product Peak Temperature: 260 +0/-5 C
- Soldering Time: 5 +1/-1 seconds
Recommended temperature profile for IR reflow Pb-free devices:
| Profile feature | Sn-Pb eutectic Assembly | Pb-free Assembly |
|---|---|---|
| Average ramp-up rate (Tsmax to Tp) | 3C/second max. | 3C/second max. |
| Time maintained above: Temperature (TL) Time (tL) | 183C 60-150 seconds | 183C 60-150 seconds |
| Ramp down rate | 6C/second max. | 6C/second max. |
| Time within 5C of actual peak temperature(tp) | 10-30 seconds | 20-40 seconds |
| Preheat Temperature Min(TS min) Temperature Max(TS max) Time(ts min to ts max) | 100C 150C 60-120 seconds | 100C 150C 60-120 seconds |
| Time 25 C to peak temperature | 6 minutes max. | 8 minutes max. |
| Peak Temperature(TP) | 240 +0/-5 C | 260 +0/-5 C |
Note: All temperatures refer to topside of the package, measured on the package body surface.
2410121728_NH-NPS20N65F_C7427699.pdf
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