High Reliability NH NPS9N20S N-Channel Enhancement Mode MOSFET for Synchronous Rectification Circuits
Key Attributes
Model Number:
NPS9N20S
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
RDS(on):
375.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Input Capacitance(Ciss):
675pF@100V
Pd - Power Dissipation:
75W
Gate Charge(Qg):
15.1nC@100V
Mfr. Part #:
NPS9N20S
Package:
TO-252
Product Description
Product Overview
The NPS9N20S is an N-Channel Enhancement Mode Power MOSFET manufactured by Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested, making it suitable for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS (Uninterruptible Power Supplies). The product is RoHS compliant.
Product Attributes
- Brand: Niuhang (NH Trademark)
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Package: TO-252
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | ||
|---|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||||
| VDS | Min.@Tj | 200 | V | |||||
| ID | Min.@Ta | 9 | A | |||||
| RDS(ON) Type | @10V | 220.00 | m | |||||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Voltage | VDS | 200 | V | |||||
| Gate-Source Voltage | VGS | 30 | V | |||||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 9 | A | ||||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 6 | A | ||||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 36 | A | ||||
| Maximum Power Dissipation | Ta= 25 | PD | 75 | W | ||||
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | 0.60 | W/ | ||||
| Junction Temperature | TJ | -55 | 150 | |||||
| Storage Temperature Range | TSTD | -55 | 150 | |||||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 25 | A | ||||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 100 V | EAS | 150 | mJ | ||||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 100.0 | /W | ||||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 1.7 | /W | ||||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 200 | V | ||||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.229 | V/ | ||||
| Drain-Source Leakage Current | VDS= 200 V,VGS=0V | I DSS | 1 | uA | ||||
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | 100 | nA | ||||
| Forward Transconductance | ID= 5 A,VDS= 5 V | gfs | 5.0 | S | ||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 2.0 | 3.0 | V | ||
| Drain-Source On Resistance | ID= 5 A,VGS= 10 V | R DS(ON) | 220.00 | 280.00 | m | |||
| Drain-Source On Resistance | ID= 5 A,VGS= 4.5 V | R DS(ON) | 253.00 | 375.20 | m | |||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 2.7 | |||||
| Input Capacitance | VDS= 100 V | C iss | 675.0 | pF | ||||
| Output Capacitance | VGS= 0 V | C oss | 85.0 | pF | ||||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 5.0 | pF | ||||
| Turn-On Delay Time | VDS= 100 V | t d(on) | 9.0 | ns | ||||
| Turn-On Rise Time | VGS= 10 V | t r | 3.5 | ns | ||||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | 27.5 | ns | ||||
| Turn-Off Rise Time | RG= 10 | t f | 4.0 | ns | ||||
| Total Gate Charge | VDS= 100 V | Q g | 15.1 | nC | ||||
| Gate-Source Charge | VGS= 10 V | Q gs | 2.5 | nC | ||||
| Gate-Drain Charge | ID= 5 A | Q gd | 5.0 | nC | ||||
| Max. Diode Forward Cuurent | I S | 9 | A | |||||
| Max. Pulsed Forward Cuurent | I SM | 32 | A | |||||
| Diode Forward Voltage | ID= 5 A,VGS=0V | V SD | 1.08 | 1.5 | V | |||
| Reverse Recovery Time | ID= 5 A,di/dt= 100 A/us | t rr | 105 | ns | ||||
| Reverse Recovery Charge | VGS= 10 V,VDS= 100 V | Q rr | 405.0 | uC | ||||
| OUTLINE DIMENSIONS TO-252 | ||||||||
| Dimension | Milimeters | Inches | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | 6.100 | - | 7.100 | 0.240 | - | 0.280 | ||
| B | 4.800 | - | 5.800 | 0.189 | - | 0.228 | ||
| C | 1.950 | - | 2.550 | 0.077 | - | 0.100 | ||
| D | 0.350 | - | 0.750 | 0.014 | - | 0.030 | ||
| E | 9.250 | - | 10.750 | 0.364 | - | 0.423 | ||
| F | 5.600 | - | 6.600 | 0.220 | - | 0.260 | ||
| G | 2.500 | - | 3.100 | 0.098 | - | 0.122 | ||
| H | 0.650 | - | 1.050 | 0.026 | - | 0.041 | ||
| J | 2.100 | - | 2.500 | 0.083 | - | 0.098 | ||
| L | 1.000 | - | 1.400 | 0.039 | - | 0.055 | ||
| M | 0.350 | - | 0.750 | 0.014 | - | 0.030 | ||
| PACKING INFORMATION | ||||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |||
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | |||
| Recommended wave soldering condition | ||||||||
| Product Peak Temperature | Soldering Time | |||||||
| Pb-free devices | 260 +0/-5 C | 5 +1/-1 seconds | ||||||
Weight: App. 0.321 Grams (0.01132 Ounce)
Note 1: Pulse Width Limited By Max. Junction Temperature. (See Fig. 13).
2411011351_NH-NPS9N20S_C41784108.pdf
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