Low RDS ON NH NPS1N60S Power MOSFET Designed for High Frequency Circuits and Switching Power Supplies
Key Attributes
Model Number:
NPS1N60S
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
1A
RDS(on):
10.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
130pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
4.8nC@10V
Mfr. Part #:
NPS1N60S
Package:
TO-252
Product Description
Product Overview
The NPS1N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, it features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high EAS for robust performance. This MOSFET is ideal for applications such as AC/DC converters, adapters, chargers, LED drivers, high-frequency circuits, and switching power supplies.
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF (According to actual changes)
- Date Code: YWW (According to actual changes)
- Internal Code: LLWWF (According to actual changes)
- Model ID: NPS1N60S
- Package: TO-252
- Certifications: RoHS COMPLIANT, Pb-Free
- Weight: Approx. 0.321 Grams (0.01132 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 1 | A | ||
| On Resistance | ID= 1 A,VGS= 10 V | RDS(ON) | 8.00 | 10.50 | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 1 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 0.6 | A | ||
| Drain Current-Pulsed | TJ< 150 | IDM | 4 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 30 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 12 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 0.24 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 9 | A | ||
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 300 V | EAS | 20 | mJ | ||
| Single Pulse Avalanche Energy | IAS= 9 A,RG= 10 Starting Tj=25 ,VG = 10 V | EAS | 20 | mJ | ||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 4.17 | /W | ||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Static off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 600 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.712 | -- | V/ |
| Drain-Source Leakage Current | VDS= 600 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 1 A,VDS= 15 V | gfs | -- | 0.8 | -- | S |
| Static on Characteristics | ||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 1 A,VGS= 10 V | R DS(ON) | -- | 8.00 | 10.50 | |
| Drain-Source On Resistance | ID= 1 A,VGS= 4.5 V | R DS(ON) | -- | 9.20 | 14.07 | |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 3.20 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 130.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 15.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 3.0 | -- | pF |
| Switching Paramters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 300 V | t d(on) | -- | 6.5 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 5.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 25.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 16.0 | -- | ns |
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 300 V | Q g | -- | 4.8 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 0.8 | -- | nC |
| Gate-Drain Charge | ID= 1 A | Q gd | -- | 2.5 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Cuurent | I S | -- | -- | 1 | A | |
| Max. Pulsed Forward Cuurent | I SM | -- | -- | 4 | A | |
| Diode Forward Voltage | ID= 1 A,VGS=0V | V SD | -- | 1.08 | 1.5 | V |
| Reverse Recovery Time | ID= 1 A,di/dt= 100 A/us | t rr | -- | 347 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 300 V | Q rr | -- | 735.0 | -- | uC |
| OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS | ||||||
| Dimension | Milimeters (Min.) | Milimeters (Typ.) | Milimeters (Max.) | Inches (Min.) | Inches (Typ.) | Inches (Max.) |
| A | 6.100 | - | 7.100 | 0.240 | - | 0.280 |
| B | 4.800 | - | 5.800 | 0.189 | - | 0.228 |
| C | 1.950 | - | 2.550 | 0.077 | - | 0.100 |
| D | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
| E | 9.250 | - | 10.750 | 0.364 | - | 0.423 |
| F | 5.600 | - | 6.600 | 0.220 | - | 0.260 |
| G | 2.500 | - | 3.100 | 0.098 | - | 0.122 |
| H | 0.650 | - | 1.050 | 0.026 | - | 0.041 |
| J | 2.100 | - | 2.500 | 0.083 | - | 0.098 |
| L | 1.000 | - | 1.400 | 0.039 | - | 0.055 |
| M | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
| PACKING INFORMATION | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | |
2411011351_NH-NPS1N60S_C41784104.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
