N Channel Power MOSFET NH NPS4N60S Featuring Low RDS ON and High EAS for AC DC Converter Applications
Key Attributes
Model Number:
NPS4N60S
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
45pF
Input Capacitance(Ciss):
580pF@25V
Pd - Power Dissipation:
75W
Gate Charge(Qg):
15.5nC@300V
Mfr. Part #:
NPS4N60S
Package:
TO-252
Product Description
Product Overview
The NPS4N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It offers low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for reliability. This MOSFET is 100% UIS and RG tested and is suitable for AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Product Line Code: FF (subject to change)
- Certifications: RoHS Compliant, Pb-Free
- Package: TO-252
- Trademark: NH
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | ||
|---|---|---|---|---|---|---|---|---|
| Product Summary | ||||||||
| Drain-Source Voltage | Tj | VDS | 600 | -- | -- | V | ||
| Current | Ta | ID | 4 | -- | -- | A | ||
| RDS(ON) Type | @10V | RDS(ON) | -- | 2.00 | -- | |||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Voltage | VDS | -- | -- | 600 | V | |||
| Gate-Source Voltage | VGS | -- | -- | 30 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 4 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 3 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 16 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 75 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.60 | -- | W/ | ||
| Junction Temperature | TJ | -55 | -- | 150 | ||||
| Storage Temperature Range | TSTD | -55 | -- | 150 | ||||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 32 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 300 V | EAS | -- | -- | 250 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 100.0 | -- | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 1.7 | -- | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 600 | -- | -- | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.712 | -- | V/ | ||
| Drain-Source Leakage Current | VDS= 600 V,VGS=0V | I DSS | -- | -- | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA | ||
| Forward Transconductance | ID= 2 A,VDS= 15 V | gfs | -- | 3.5 | -- | S | ||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V | ||
| Drain-Source On Resistance | ID= 2 A,VGS= 10 V | R DS(ON) | -- | 2.00 | 2.50 | |||
| Drain-Source On Resistance | ID= 2 A,VGS= 4.5 V | R DS(ON) | -- | 2.30 | 3.35 | |||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 2.50 | -- | |||
| Input Capacitance | VDS= 25 V | C iss | -- | 580.0 | -- | pF | ||
| Output Capacitance | VGS= 0 V | C oss | -- | 45.0 | -- | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 3.0 | -- | pF | ||
| Switching Parameters (Test Circuit & Waveform See Fig.14) | ||||||||
| Turn-On Delay Time | VDS= 300 V | t d(on) | -- | 13.0 | -- | ns | ||
| Turn-On Rise Time | VGS= 10 V | t r | -- | 9.0 | -- | ns | ||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 25.0 | -- | ns | ||
| Turn-Off Rise Time | RG= 10 | t f | -- | 10.0 | -- | ns | ||
| Gate Charge Parameters (Test Circuit & Waveform See Fig.15) | ||||||||
| Total Gate Charge | VDS= 300 V | Q g | -- | 15.5 | -- | nC | ||
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 3.0 | -- | nC | ||
| Gate-Drain Charge | ID= 2 A | Q gd | -- | 8.5 | -- | nC | ||
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||||
| Max. Diode Forward Current | I S | -- | -- | 4 | A | |||
| Max. Pulsed Forward Current | I SM | -- | -- | 14 | A | |||
| Diode Forward Voltage | ID= 2 A,VGS=0V | V SD | -- | 1.08 | 1.5 | V | ||
| Reverse Recovery Time | ID= 2 A,di/dt= 100 A/us | t rr | -- | 560 | -- | ns | ||
| Reverse Recovery Charge | VGS= 10 V,VDS= 300 V | Q rr | -- | 2500.0 | -- | uC | ||
| Outline Dimensions (TO-252) | ||||||||
| Dim | Unit | Min | Typ | Max | Unit | Min | Typ | Max |
| A | mm | 6.100 | -- | 7.100 | Inches | 0.240 | -- | 0.280 |
| B | mm | 4.800 | -- | 5.800 | Inches | 0.189 | -- | 0.228 |
| C | mm | 1.950 | -- | 2.550 | Inches | 0.077 | -- | 0.100 |
| D | mm | 0.350 | -- | 0.750 | Inches | 0.014 | -- | 0.030 |
| E | mm | 9.250 | -- | 10.750 | Inches | 0.364 | -- | 0.423 |
| F | mm | 5.600 | -- | 6.600 | Inches | 0.220 | -- | 0.260 |
| G | mm | 2.500 | -- | 3.100 | Inches | 0.098 | -- | 0.122 |
| H | mm | 0.650 | -- | 1.050 | Inches | 0.026 | -- | 0.041 |
| J | mm | 2.100 | -- | 2.500 | Inches | 0.083 | -- | 0.098 |
| L | mm | 1.000 | -- | 1.400 | Inches | 0.039 | -- | 0.055 |
| M | mm | 0.350 | -- | 0.750 | Inches | 0.014 | -- | 0.030 |
| Packing Information | ||||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |||
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | |||
2411011351_NH-NPS4N60S_C41784106.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
