Low RDS ON N Channel Enhancement Super Junction MOSFET NH NJS65R380F for High Frequency Circuits
Key Attributes
Model Number:
NJS65R380F
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
11A
RDS(on):
536mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@25V
Pd - Power Dissipation:
13W
Gate Charge(Qg):
22nC
Mfr. Part #:
NJS65R380F
Package:
TO-220F
Product Description
Product Overview
The NJS65R380F is an N-Channel Enhancement Super Junction MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It offers low RDS(ON) for high efficiency and low gate charge for high-speed switching. Its high EAS ensures high reliability, and it is 100% UIS and RG tested. This MOSFET is suitable for high-frequency circuits and switching power supplies, including AC/DC converters, adapters, chargers, and LED drivers.
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Model ID: NJS65R380F
- Package: TO-220F
- Certifications: RoHS COMPLIANT
- Material: Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Min.@Tj | VDS | 655 | -- | -- | V |
| Continuous Drain Current | Min.@Ta | ID | 11 | -- | -- | A |
| RDS(ON) Type | @10V | RDS(ON) | -- | 318.00 | -- | m |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | -- | -- | 655 | V | |
| Gate-Source Voltage | VGS | -- | -- | 30 | V | |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 11 | A |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 7 | A |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 44 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 31 | W |
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.25 | -- | W/ |
| Junction Temperature | TJ | -55 | -- | 150 | ||
| Storage Temperature Range | TSTD | -55 | -- | 150 | ||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 50 | A |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 327.5 V | EAS | -- | -- | 625 | mJ |
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 80.0 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 4.0 | -- | /W |
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 655 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.778 | -- | V/ |
| Drain-Source Leakage Current | VDS= 655 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 6 A,VDS= 15 V | gfs | -- | 9 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.8 | 3.5 | 4.2 | V |
| Drain-Source On Resistance | ID= 6 A,VGS= 10 V | R DS(ON) | -- | 318.00 | 400.00 | m |
| Drain-Source On Resistance | ID= 6 A,VGS= 4.5 V | R DS(ON) | -- | 365.70 | 536.00 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 11.00 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 900.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 60.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 5.5 | -- | pF |
| Turn-On Delay Time | VDS= 327.5 V | t d(on) | -- | 7.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 20.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 30.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 20.0 | -- | ns |
| Total Gate Charge | VDS= 327.5 V | Q g | -- | 22.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 6.0 | -- | nC |
| Gate-Drain Charge | ID= 6 A | Q gd | -- | 15.0 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||||
| Max. Diode Forward Cuurent | I S | -- | -- | 11 | A | |
| Max. Pulsed Forward Cuurent | I SM | -- | -- | 39 | A | |
| Diode Forward Voltage | ID= 6 A,VGS=0V | V SD | -- | 0.80 | 1.1 | V |
| Reverse Recovery Time | ID= 6 A,di/dt= 100 A/us | t rr | -- | 250 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 327.5 V | Q rr | -- | 2.5 | -- | uC |
| Weight | -- | 2.048 | -- | Grams (0.07224 Ounce) | ||
| Package | TO-220F | -- | -- | |||
| Recommended Wave Soldering Peak Temperature | Pb-free devices | 260 | -- | +0/-5 | C | |
| Recommended Wave Soldering Time | Pb-free devices | 5 | -- | +1/-1 | seconds | |
2411011351_NH-NJS65R380F_C41784099.pdf
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