NPN epitaxial planar transistor PAKER PMBT2222A with SOT23 small outline plastic package halogen free and RoHS compliant

Key Attributes
Model Number: PMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PMBT2222A
Package:
SOT-23
Product Description

Product Overview

The PMBT2222A is an NPN epitaxial planar die construction transistor housed in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package with tape/reel packing options. This transistor is suitable for various electronic applications.

Product Attributes

  • Brand:
  • Origin: Shenzhen, China
  • Material: Epoxy UL: 94V-0
  • Certifications: Halogen free and RoHS compliant
  • Package: SOT-23 Small Outline Plastic Package
  • Packing: Tape/Reel, 7" reel, 3000 pcs per reel (EIA-481-1)

Technical Specifications

SymbolParameterTest ConditionMinMaxUnit
Breakdown VoltagesV(BR)CBOCollector-base breakdown voltage, IC=10uA, IE=075V
V(BR)CEOCollector-emitter breakdown voltage, IC=1mA, IB=075V
V(BR)EBOEmitter-base breakdown voltage, IE=10uA, IC=06V
VCBOCollector-Base Voltage60V
VCEOCollector-Emitter Voltage40V
VEBOEmitter-Base Voltage6V
CurrentsICBOCollector cut-off current, VCB=60V, IE=010nA
IEBOEmitter cut-off current, VEB=3V, IC=010nA
Saturation VoltagesVCE(sat)1*Collector-emitter saturation voltage, IC=500mA, IB=50mA1.00V
VCE(sat)2*Collector-emitter saturation voltage, IC=150mA, IB=15mA0.30V
Base-Emitter Saturation VoltagesVBE(sat)1*Base-emitter saturation voltage, IC=500mA, IB=50mA2.00V
VBE(sat)2*Base-emitter saturation voltage, IC=150mA, IB=15mA1.20V
DC Current GainhFE(1)*VCE=10V, IC=150mA100300
hFE(2)*VCE=10V, IC=0.1mA100
hFE(3)*VCE=10V, IC=500mA300
Switching TimestdDelay time, VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA25nS
trRise time225nS
tsStorage time, VCC=30V, IC=150mA, IB1=IB2=15mA60nS
tfFall time300nS
Transition FrequencyfTVCE=20V, IC=20mA,f=100MHz300MHz
Thermal ResistanceRJAThermal Resistance Junction to Ambient625/W
Maximum Power DissipationPCTotal Dissipated Power625mW
Operating & Storage TemperaturesTJJunction Temperature150
TstgStorage Temperature-55+150

Package Outline Dimensions (SOT-23)

SYMBOLMILLIMETERINCHES
MINMAXMINMAX
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
D2.8003.0000.1100.118
b0.3000.5000.0120.020
E2.2502.5500.0890.100
E11.2001.4000.0470.055
e0.950 BSC0.037 BSC
L0.3000.5000.0120.020
08

2410122013_PAKER-PMBT2222A_C5278876.pdf

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