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quality Power MOSFET NH NPB9N20ES N Channel Enhancement Mode Featuring Low Gate Charge and High Reliability factory
quality Power MOSFET NH NPB9N20ES N Channel Enhancement Mode Featuring Low Gate Charge and High Reliability factory

Power MOSFET NH NPB9N20ES N Channel Enhancement Mode Featuring Low Gate Charge and High Reliability

Key Attributes
Model Number: NPB9N20ES
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
RDS(on):
375.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
675pF@100V
Pd - Power Dissipation:
75W
Gate Charge(Qg):
15.1nC@100V
Mfr. Part #:
NPB9N20ES
Package:
TO-251
Product Description

Product Overview

The NPB9N20ES is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability in demanding applications. Typical uses include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: Niuhang (NH)
  • Product Line Code: FF
  • Date Code: YWW
  • Internal Code: LLWWF
  • Certifications: RoHS COMPLIANT
  • Package: TO-251

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Model ID NPB9N20ES
Drain-Source Voltage VDS 200 V Min.@Tj
Continuous Drain Current ID 9 A Min.@Ta
RDS(ON) Type RDS(ON) 220.00 280.00 m ID= 5 A,VGS= 10 V
Drain-Source Breakdown Voltage BV DSS 200 V VGS=0V,ID=250uA
Drain-Source Leakage Current IDSS 1 uA VDS= 200 V,VGS=0V
Gate-Body Leakage Current IGSS 100 nA VGS= 30 V,VDS=0V
Gate Threshold Voltage VGS(TH) 1.0 2.0 3.0 V ID=250uA
Input Capacitance Ciss 675.0 pF VDS= 100 V
Output Capacitance Coss 85.0 pF VGS= 0 V
Reverse Transfer Capacitance Crss 5.0 pF F= 1 MHZ
Turn-On Delay Time td(on) 9.0 ns VDS= 100 V
Turn-On Rise Time tr 3.5 ns VGS= 10 V
Turn-Off Delay Time td(off) 27.5 ns RL= 1.2
Turn-Off Rise Time tf 4.0 ns RG= 10
Total Gate Charge Qg 15.1 nC VDS= 100 V
Continuous Drain Current (Note 1) ID 9 A Ta= 25
Continuous Drain Current (Note 1) ID 6 A Ta= 100
Drain Current-Pulsed (Note 1) IDM 36 A TJ< 150
Maximum Power Dissipation PD 75 W Ta= 25
Power Dissipation Derating Factor DF 0.60 W/ Above 25
Junction Temperature TJ -55 150
Storage Temperature Range TSTD -55 150
Avalanche Current,Single Pulse (Note 1) IAS 25 A L= 0.5 mH
Single Pulse Avalanche Energy (Note 1) EAS 150 mJ L= 0.5 mH,VDD= 100 V
Thermal Resistance Junction To Ambient RJA 100.0 /W Still Air Environment With Ta =25C
Thermal Resistance Junction-Case RJC 1.7 /W Device Mounted On 1 in 2 FR-4 Board With 2oz
Weight 0.361 Gram (0.01273 Ounce)

Note: 1. Pulse Width Limited By Max. Junction Temperature. (See Fig. 13).


2412051120_NH-NPB9N20ES_C41784102.pdf

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