NJS65R600F NH Super Junction MOSFET Designed for Performance in Switching Power Supplies and Chargers
Key Attributes
Model Number:
NJS65R600F
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
7A
RDS(on):
600mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
1 N-channel
Output Capacitance(Coss):
23pF
Pd - Power Dissipation:
12W
Input Capacitance(Ciss):
380pF@25V
Gate Charge(Qg):
12.6nC@325V
Mfr. Part #:
NJS65R600F
Package:
TO-220F
Product Description
Product Overview
The NJS65R600F is an N-Channel Enhancement Super Junction MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for use in AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies.
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NJS65R600F
- Package: TO-220F
- Certifications: RoHS COMPLIANT, Pb-Free
- Origin: Guangdong Niuhang Specification Electronic Technology Co., Ltd
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Min.@Tj | VDS | 650 | -- | -- | V |
| Continuous Drain Current | Min.@Ta | ID | 7 | -- | -- | A |
| Drain-Source On Resistance | Type@10V | RDS(ON) | -- | 500.00 | 600.00 | m |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | -- | -- | 650 | V | |
| Gate-Source Voltage | VGS | -- | -- | 30 | V | |
| Continuous Drain Current | Ta= 25 | ID | -- | -- | 7 | A |
| Continuous Drain Current | Ta= 100 | ID | -- | -- | 4 | A |
| Drain Current-Pulsed | TJ< 150 | IDM | -- | -- | 28 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 30 | W |
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.24 | -- | W/ |
| Junction Temperature | TJ | -55 | -- | 150 | ||
| Storage Temperature Range | TSTD | -55 | -- | 150 | ||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | -- | -- | 15.5 | A |
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 325 V | EAS | -- | -- | 60 | mJ |
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 60.0 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 4.2 | -- | /W |
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 650 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.772 | -- | V/ |
| Drain-Source Leakage Current | VDS= 650 V,VGS=0V | I DSS | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 4 A,VDS= 15 V | gfs | -- | 6 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 4 A,VGS= 10 V | R DS(ON) | -- | 500.00 | 600.00 | m |
| Drain-Source On Resistance | ID= 4 A,VGS= 4.5 V | R DS(ON) | -- | 575.00 | 804.00 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 6.50 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 380.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 23.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 1.0 | -- | pF |
| Turn-On Delay Time | VDS= 325 V | t d(on) | -- | 7.5 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 10.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 50.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 8.5 | -- | ns |
| Total Gate Charge | VDS= 325 V | Q g | -- | 12.6 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 2.5 | -- | nC |
| Gate-Drain Charge | ID= 4 A | Q gd | -- | 5.3 | -- | nC |
| Max. Diode Forward Current | I S | -- | -- | 7 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 25 | A | |
| Diode Forward Voltage | ID= 4 A,VGS=0V | V SD | -- | 0.80 | 1.1 | V |
| Reverse Recovery Time | ID= 4 A,di/dt= 100 A/us | t rr | -- | 190 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 325 V | Q rr | -- | 1.5 | -- | uC |
| Physical Dimensions | ||||||
| Weight | -- | 2.048 Grams | -- | (0.07224 Ounce) | ||
| Package Type | TO-220F | -- | -- | |||
2411011351_NH-NJS65R600F_C41784100.pdf
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