NIKO SEM PJ614DA Dual N Channel Enhancement Mode Field Effect Transistor Suitable for Power Switching
Key Attributes
Model Number:
PJ614DA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.8mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
168pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.133nF@10V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
17.4nC@4.5V
Mfr. Part #:
PJ614DA
Package:
DFN(3x3)
Product Description
Product Overview
The F-43-3 PJ614DA is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features J-Lead packaging, is Halogen-Free & Lead-Free, and offers robust performance with a 20V Drain-Source Voltage and up to 10.5A Continuous Drain Current. This transistor is suitable for power management and switching applications where efficiency and reliability are critical.
Product Attributes
- Brand: NIKO-SEM
- Model: PJ614DA
- Type: Dual N-Channel Enhancement Mode Field Effect Transistor
- Package: J-Lead
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA = 25 C | 10.5 | A | ||
| Continuous Drain Current | ID | TA = 70 C | 8.4 | A | ||
| Pulsed Drain Current | IDM | 28 | A | |||
| Avalanche Current | IAS | 22 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 24 | mJ | ||
| Power Dissipation | PD | TA = 25 C | 2.1 | W | ||
| Power Dissipation | PD | TA = 70 C | 1.3 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient (t 10s) | RJA | 58 | C / W | |||
| Junction-to-Ambient (Steady-State) | RJA | 73 | C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 0.35 | 0.7 | 1 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = 8V | 30 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 16V, VGS = 0V | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 10V, VGS = 0V, TJ = 70 C | 10 | uA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 2.5V, ID = 3A | 8.5 | 13 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 3.1V, ID = 3A | 7.8 | 11.5 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 3.8V, ID = 3A | 7.2 | 10.6 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 3A | 7.1 | 10 | m | |
| Forward Transconductance | gfs | VDS = 5V, ID = 3A | 40 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 10V, f = 1MHz | 1133 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 10V, f = 1MHz | 214 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 10V, f = 1MHz | 168 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.5 | |||
| Total Gate Charge | Qg | VDS = 10V , VGS = 4.5V, ID = 3A | 17.4 | nC | ||
| Gate-Source Charge | Qgs | VDS = 10V , VGS = 4.5V, ID = 3A | 1.1 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 10V , VGS = 4.5V, ID = 3A | 5.1 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 10V , ID 3A, VGS = 4.5V, RG = 6 | 24 | nS | ||
| Rise Time | tr | VDS = 10V , ID 3A, VGS = 4.5V, RG = 6 | 32 | nS | ||
| Turn-Off Delay Time | td(off) | VDS = 10V , ID 3A, VGS = 4.5V, RG = 6 | 66 | nS | ||
| Fall Time | tf | VDS = 10V , ID 3A, VGS = 4.5V, RG = 6 | 35 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 1.7 | A | |||
| Forward Voltage | VSD | IF = 3A, VGS = 0V | 1.2 | V | ||
| Reverse Recovery Time | trr | IF = 3A, dlF/dt = 100A / S | 14 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 3A, dlF/dt = 100A / S | 5.4 | nC | ||
2411220151_NIKO-SEM-PJ614DA_C532975.pdf
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