power management component NIKO-SEM P5102FM P Channel Enhancement Mode MOSFET for switching circuits
Key Attributes
Model Number:
P5102FM
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-
RDS(on):
71mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
117pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.18nF
Output Capacitance(Coss):
185pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
16.7nC@4.5V
Mfr. Part #:
P5102FM
Package:
SOT-23
Product Description
Product Overview
The P5102FM is a P-Channel Enhancement Mode MOSFET designed for various applications. It offers key electrical characteristics and absolute maximum ratings suitable for power management and switching circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Test Conditions | Symbol | Min | Typ | Max | Unit | |
| STATIC LIMITS | Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | |||
| Gate Threshold Voltage | VGS(th) | -0.45 | -0.6 | -0.9 | V | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | -10 | nA | |||
| Gate-Source Leakage | IGSS | 100 | nA | ||||
| Drain-Source On-State Resistance | RDS(ON) | -4.5V, ID = -3.5A | 40 | 45 | m | ||
| VGS = -4.5V, ID = -3.5A | 45 | 55 | m | ||||
| Continuous Drain Current | ID | TA = 25 C | -20 | V | |||
| ELECTRICAL CHARACTERISTICS | Input Capacitance | Ciss | VGS = 0V, VDS = -10V, f = 1MHz | 1180 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = -10V, f = 1MHz | 185 | pF | |||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -10V, f = 1MHz | 117 | pF | |||
| Forward Transconductance | gfs | VDS = -10V, ID = -3.5A | 48 | 55 | S | ||
| On-State Drain Current | ID(ON) | VDS = -5V, VGS = -4.5V | -3.5 | A | |||
| DYNAMIC | Turn-On Delay Time | td(on) | ID @ -3.5A, VGS = -4.5V, RGEN = 3.3 | 14 | nS | ||
| Rise Time | tr | ID @ -3.5A, VGS = -4.5V, RGEN = 3.3 | 20 | nS | |||
| Fall Time | tf | ID @ -3.5A, VGS = -4.5V, RGEN = 3.3 | 36 | nS | |||
| SOURCE-DRAIN DIODE | Continuous Current | IS | -3.5 | A | |||
| Forward Voltage | VSD | IF = -3.5A, VGS = 0V | -1.3 | V | |||
| Reverse Recovery Time | trr | IF = -3.5A, dlF/dt = 100A / mS | 4.6 | nS | |||
| ABSOLUTE MAXIMUM RATINGS | Drain-Source Voltage | VDS | -21 | V | |||
| Continuous Drain Current | ID | TA = 25 C | -3.5 | A | |||
| Pulsed Drain Current | IDM | -20 | A | ||||
| Gate-Source Voltage | VGS | 8 | V | ||||
| Power Dissipation | PD | TA = 25 C | 0.6 | W | |||
| TA = 70 C | 1.0 | W | |||||
| THERMAL RESISTANCE | Junction-to-Ambient | RqJA | 120 | C / W | |||
| MAXIMUM THERMAL RESISTANCE | Junction & Storage Temperature Range | TJ, TSTG | -55 to 150 | C |
2410010302_NIKO-SEM-P5102FM_C133604.pdf
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