N Channel Logic Level Enhancement Mode Field Effect Transistor with SOT 23 Package NIKO-SEM P8503BMG
Key Attributes
Model Number:
P8503BMG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
217pF@15V
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
6.2nC@10V
Mfr. Part #:
P8503BMG
Package:
SOT-23
Product Description
Product Overview
The P8503BMG is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It features Halogen-Free & Lead-Free construction and is housed in a SOT-23 package.
Product Attributes
- Brand: NIKO-SEM
- Package: SOT-23
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA = 25 °C | 2.4 | A | ||
| Continuous Drain Current | ID | TA = 100 °C | 1.5 | A | ||
| Pulsed Drain Current | IDM | 10 | A | |||
| Avalanche Current | IAS | 12 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 7 | mJ | ||
| Power Dissipation | PD | TA = 25 °C | 0.75 | W | ||
| Power Dissipation | PD | TA = 100 °C | 0.3 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | ||
| Lead Temperature | TL | 1/16 from case for 10 sec. | 275 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RΘJA | 166 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250μA | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 0.8 | 1.7 | 2.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 125 °C | 10 | μA | ||
| On-State Drain Current | ID(ON) | VDS = 10V, VGS = 10V | 10 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 1.5A | 72 | 115 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 3A | 50 | 85 | mΩ | |
| Forward Transconductance | gfs | VDS = 15V, ID = 3A | 16 | S | ||
| DYNAMIC | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 217 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 68 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 46 | pF | ||
| Total Gate Charge | Qg(4.5V) | VDS = 0.5V(BR)DSS, ID = 3A | 3 | nC | ||
| Total Gate Charge | Qg(10V) | VDS = 0.5V(BR)DSS, ID = 3A | 6.2 | nC | ||
| Gate-Source Charge | Qgs(4.5V) | VDS = 0.5V(BR)DSS, ID = 3A | 0.7 | nC | ||
| Gate-Source Charge | Qgs(10V) | VDS = 0.5V(BR)DSS, ID = 3A | 0.7 | nC | ||
| Gate-Drain Charge | Qgd(4.5V) | VDS = 0.5V(BR)DSS, ID = 3A | 1.5 | nC | ||
| Gate-Drain Charge | Qgd(10V) | VDS = 0.5V(BR)DSS, ID = 3A | 2.1 | nC | ||
| Turn-On Delay Time | td(on) | ID ≈ 3A, VGS = 10V, RGS = 2.5Ω | 6.0 | nS | ||
| Rise Time | tr | ID ≈ 3A, VGS = 10V, RGS = 2.5Ω | 6.0 | nS | ||
| Turn-Off Delay Time | td(off) | ID ≈ 3A, VGS = 10V, RGS = 2.5Ω | 20 | nS | ||
| Fall Time | tf | ID ≈ 3A, VGS = 10V, RGS = 2.5Ω | 5.0 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 2.3 | A | |||
| Forward Voltage | VSD | IF = IS, VGS = 0V | 1.5 | V | ||
2411220217_NIKO-SEM-P8503BMG_C532966.pdf
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