Schottky Barrier Rectifier NH MBR10150DCT for Power Supplies Fast Switching and Low Forward Voltage Drop
Key Attributes
Model Number:
MBR10150DCT
Product Custom Attributes
Reverse Leakage Current (Ir):
120A
Non-Repetitive Peak Forward Surge Current:
120A
Diode Configuration:
2 Pair Common Anode
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
150V
Current - Rectified:
10A
Mfr. Part #:
MBR10150DCT
Package:
TO-220AB
Product Description
Niuhang Electronic MBR1040DCT THRU MBR10200DCT Schottky Barrier Rectifiers
The MBR1040DCT to MBR10200DCT series are Schottky Barrier Rectifiers from Niuhang Electronic, featuring NH'S Plane Schottky Barrier Chip Technology for high efficiency and reliability. These rectifiers offer a low forward voltage drop and fast switching speed, making them ideal for various power applications. They are designed for use in Switch Mode Power Supplies (SMPS), Fast Chargers, LED Driver and Monitor Lighting, and Automotive Electronics.
Product Attributes
- Brand: Niuhang Electronic
- Origin: China
- Certifications: RoHS-Compliant, UL-94 ClassV-0 Recognized
- Material: Molded Case, Tin Plated Leads
Technical Specifications
| Model | Max. Repetitive Peak Reverse Voltage (VRRM) | Max. RMS Voltage (VRMS) | Max. DC Blocking Voltage (VDC) | Max. Average Forward Rectified Current Per Diode (IF(AV)) | Peak Forward Surge Current Per Diode (IFSM) | Instaneous Forward Voltage Per Diode (VF) @ IF=5.0A | Max. DC Reverse Current (IRRM) @ VR=VRRM, Ta=25 | Max. DC Reverse Current (IRRM) @ VR=VRRM*80%, Ta=110 | Typical Junction Capacitance (CJ) @ 4V, 1MHz | Max. Reverse Recovery Time (Trr) | Operating Junction Temperature Range (TJ) | Storage Temperature Range (TSTD) | Thermal Resistance Junction To Ambient (RJA) | Thermal Resistance Junction-Case (RJC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR1040DCT | 40V | 28V | 40V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.55V | 100uA | 10mA | 350pF | 35nS | -55~150 | -55~150 | 60.0/W | 2.5/W |
| MBR1045DCT | 45V | 32V | 45V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.70V | 80uA | 8mA | 280pF | 35nS | -55~175 | -55~175 | 60.0/W | 2.5/W |
| MBR1060DCT | 60V | 42V | 60V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.85V | 50uA | 5mA | 220pF | 35nS | -55~175 | -55~175 | 60.0/W | 2.5/W |
| MBR1080DCT | 80V | 56V | 80V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.90V | 10uA | 3mA | 100pF | 35nS | -55~175 | -55~175 | 60.0/W | 2.5/W |
| MBR10100DCT | 100V | 70V | 100V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.90V | 10uA | 3mA | 100pF | 35nS | -55~175 | -55~175 | 60.0/W | 2.5/W |
| MBR10150DCT | 150V | 105V | 150V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.90V | 10uA | 3mA | 100pF | 35nS | -55~175 | -55~175 | 60.0/W | 2.5/W |
| MBR10200DCT | 200V | 140V | 200V | 5A (Per Diode) / 10A (Total Device) | 120A | 0.90V | 10uA | 3mA | 100pF | 35nS | -55~175 | -55~175 | 60.0/W | 2.5/W |
2508201745_NH-MBR10150DCT_C7428026.pdf
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