PDFN 3x3S package dual channel enhancement mode field effect transistor NIKO-SEM PE642DT for switching
Key Attributes
Model Number:
PE642DT
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
34A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
139pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
782pF@15V
Pd - Power Dissipation:
20W
Gate Charge(Qg):
9.6nC@10V
Mfr. Part #:
PE642DT
Package:
DFN-8-EP(3x3)
Product Description
Product Overview
The PE642DT is a Dual N-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed for efficient power management. It features a PDFN 3x3S package, offering Halogen-Free & Lead-Free compliance. This transistor is suitable for various applications requiring reliable switching and power handling capabilities.
Product Attributes
- Brand: NIKO-SEM
- Model: PE642DT
- Package: PDFN 3x3S
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Q2 | Q1 | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 30 | 30 | V |
| Gate-Source Voltage | VGS | ±20 | ±20 | V |
| Continuous Drain Current (TC = 25 °C) | ID | 34 | 31 | A |
| Continuous Drain Current (TC = 100 °C) | ID | 22 | 20 | A |
| Pulsed Drain Current | IDM | 48 | 46 | A |
| Continuous Drain Current (TA = 25 °C) | ID | 11 | 9.7 | A |
| Continuous Drain Current (TA = 70 °C) | ID | 8.8 | 7.7 | A |
| Avalanche Current | IAS | 21 | 18.3 | A |
| Avalanche Energy (L = 0.1mH) | EAS | 22 | 16.7 | mJ |
| Power Dissipation (TC = 25 °C) | PD | 20 | 19 | W |
| Power Dissipation (TC = 100 °C) | PD | 8 | 7.6 | W |
| Power Dissipation (TA = 25 °C) | PD | 2 | 1.7 | W |
| Power Dissipation (TA = 70 °C) | PD | 1.2 | 1.1 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | 62 | 70 | °C / W |
| Junction-to-Case | RθJC | 6.2 | 6.5 | °C / W |
| PRODUCT SUMMARY | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30V | 30V | |
| On-State Resistance | RDS(ON) | 9mΩ | 10.5mΩ | |
| Continuous Drain Current | ID | 34A | 31A | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) | V(BR)DSS | 30 | 30 | V |
| Gate Threshold Voltage (VDS = VGS, ID = 250µA) | VGS(th) | 1.3 - 2.3 | 1.3 - 2.3 | V |
| Gate-Body Leakage (VDS = 0V, VGS = ±20V) | IGSS | ±100 | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS = 24V, VGS = 0V) | IDSS | 1 | 1 | µA |
| Zero Gate Voltage Drain Current (VDS = 20V, VGS = 0V, TJ = 55 °C) | IDSS | 10 | 10 | µA |
| Drain-Source On-State Resistance (VGS = 4.5V, ID = 10A) | RDS(ON) | 8 - 12 | mΩ | |
| Drain-Source On-State Resistance (VGS = 4.5V, ID = 9A) | RDS(ON) | 13 - 15.5 | mΩ | |
| Drain-Source On-State Resistance (VGS = 10V, ID = 10A) | RDS(ON) | 6.3 - 9 | mΩ | |
| Drain-Source On-State Resistance (VGS = 10V, ID = 9.5A) | RDS(ON) | 8.6 - 10.5 | mΩ | |
| Forward Transconductance (VDS = 5V, ID = 10A) | gfs | 43 | S | |
| Forward Transconductance (VDS = 5V, ID = 9.5A) | gfs | 45 | S | |
| Input Capacitance (VGS = 0V, VDS = 15V, f = 1MHz) | Ciss | 782 | 616 | pF |
| Output Capacitance (VGS = 0V, VDS = 15V, f = 1MHz) | Coss | 139 | 120 | pF |
| Reverse Transfer Capacitance (VGS = 0V, VDS = 15V, f = 1MHz) | Crss | 76 | 83 | pF |
| Gate Resistance (VGS = 0V, VDS = 0V, f = 1MHz) | Rg | 2.3 - 3.5 | 2.7 - 4 | Ω |
| Total Gate Charge (VDS = 15V, VGS = 10V, ID = 10A) | Qg | 18 | nC | |
| Total Gate Charge (VDS = 15V, VGS = 10V, ID = 9.5A) | Qg | 14 | nC | |
| Gate-Source Charge (VDS = 15V, VGS = 4.5V) | Qgs | 2.2 | 2.1 | nC |
| Gate-Drain Charge (VDS = 15V, VGS = 4.5V) | Qgd | 5.2 | 4 | nC |
| Turn-On Delay Time (VDS = 15V, ID ˜ 10A, VGS = 10V, RGEN = 6Ω) | td(on) | 27 | nS | |
| Turn-On Delay Time (VDS = 15V, ID ˜ 9.5A, VGS = 10V, RGEN = 6Ω) | td(on) | 18 | nS | |
| Rise Time (VDS = 15V, ID ˜ 10A, VGS = 10V, RGEN = 6Ω) | tr | 24 | nS | |
| Rise Time (VDS = 15V, ID ˜ 9.5A, VGS = 10V, RGEN = 6Ω) | tr | 24 | nS | |
| Turn-Off Delay Time (VDS = 15V, ID ˜ 10A, VGS = 10V, RGEN = 6Ω) | td(off) | 47 | nS | |
| Turn-Off Delay Time (VDS = 15V, ID ˜ 9.5A, VGS = 10V, RGEN = 6Ω) | td(off) | 44 | nS | |
| Fall Time (VDS = 15V, ID ˜ 10A, VGS = 10V, RGEN = 6Ω) | tf | 25 | nS | |
| Fall Time (VDS = 15V, ID ˜ 9.5A, VGS = 10V, RGEN = 6Ω) | tf | 23 | nS | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 16 | 17 | A |
| Forward Voltage (IF = 10A, VGS = 0V) | VSD | 1.2 | V | |
| Forward Voltage (IF = 9.5A, VGS = 0V) | VSD | 1.1 | V | |
| Reverse Recovery Time (IF = 10A, dlF/dt = 100A / μS) | trr | 10.5 | nS | |
| Reverse Recovery Time (IF = 9.5A, dlF/dt = 100A / μS) | trr | 9.3 | nS | |
| Reverse Recovery Charge (IF = 10A, dlF/dt = 100A / μS) | Qrr | 2.8 | nC | |
| Reverse Recovery Charge (IF = 9.5A, dlF/dt = 100A / μS) | Qrr | 2.2 | nC | |
2411220126_NIKO-SEM-PE642DT_C532974.pdf
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