Power MOSFET PAKER SI2323 Featuring P Channel Type and Ultra Low On Resistance Small Outline Package
Key Attributes
Model Number:
SI2323
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-
RDS(on):
39mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
-
Input Capacitance(Ciss):
830pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8.5nC
Mfr. Part #:
SI2323
Package:
SOT-23
Product Description
Product Overview
The SI2323 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant.
Product Attributes
- Brand: (Pakermicro)
- Origin: (Shenzhen)
- Certifications: Halogen free and RoHS compliant
- Package Type: SOT-23 Small Outline Plastic Package
- Material: Epoxy
- Flammability: UL:94V-0
Technical Specifications
| Parameter | Condition | Symbol | Min | Typ | Max | Unit | |
| Maximum Ratings & Thermal Characteristics | Drain-Source Breakdown Voltage | VDS | -20 | -- | -- | V | |
| Gate-Source Voltage | VGS | -- | -- | ±8 | V | ||
| Diode Continuous Forward Current | Tc=25°C | IS | -- | -- | -5.3 | A | |
| Pulse Drain Current | Tc=25°C | IDM | -- | -- | -21 | A | |
| Continuous Drain Current@GS=10V | Tc=25°C | ID | -- | -- | -5.3 | A | |
| Maximum Power Dissipation | Tc=25°C | PD | -- | -- | 1.3 | W | |
| Thermal Resistance Junction-to-Ambient | RθJA | -- | 98 | -- | °C/W | ||
| Maximum Junction Temperature | TJ | -- | -- | 150 | °C | ||
| Storage Temperature Range | TSTG | -55 | -- | 150 | °C | ||
| Electrical Characteristics | Drain-Source Breakdown Voltage | VGS=0VID=-250µA | BV(BR)DSS | -20 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=-20VVGS=0V | IDSS | -- | -- | -1 | µA | |
| Gate-Body Leakage Current | VGS=±8VVDS=0V | IGSS | -- | -- | ±100 | nA | |
| Gate Threshold Voltage | VDS=VGSID=-250µA | VGS(th) | -0.4 | -0.6 | -1.0 | V | |
| Drain-Source On-State Resistance | VGS=-4.5VID=-5A | RDS(on) | -- | 32 | 39 | mΩ | |
| Drain-Source On-State Resistance | VGS=-4.5VID=-5A | RDS(on) | -- | 41 | 50 | mΩ | |
| Drain-Source On-State Resistance | VGS=-4.5VID=-5A | RDS(on) | -- | -- | 88 | mΩ | |
| Input Capacitance | VDS=-10VVGS=0V f=1MHz | CISS | -- | 830 | -- | pF | |
| Output Capacitance | VDS=-10VVGS=0V f=1MHz | COSS | -- | 130 | -- | pF | |
| Output Capacitance | VDS=-10VVGS=0V f=1MHz | CRSS | -- | 85 | -- | pF | |
| Dynamic Electrical Characteristics | Total Gate Charge | VDS=-10VID=-3A VGS=-10V | Qg | -- | 8.5 | -- | nC |
| Gate Source Charge | VDS=-10VID=-3A VGS=-10V | Qgs | -- | 1.5 | -- | nC | |
| Gate Drain Charge | VDS=-10VID=-3A VGS=-10V | Qgd | -- | 1.9 | -- | nC | |
| Turn-on Delay Time | VDD=-10VID=-3.3A VGS=- 4.5VRG=1Ω | td(on) | -- | 10 | -- | nS | |
| Turn-on Rise Time | VDD=-10VID=-3.3A VGS=- 4.5VRG=1Ω | tr | -- | 35 | -- | nS | |
| Turn-Off Delay Time | VDD=-10VID=-3.3A VGS=- 4.5VRG=1Ω | td(off) | -- | 52 | -- | nS | |
| Turn-Off Fall Time | VDD=-10VID=-3.3A VGS=- 4.5VRG=1Ω | tf | -- | 55 | -- | nS | |
| Source-Drain Diode Characteristics | Forward on voltage | Tj=25°CIs=-3A | VSD | -- | -- | -1.2 | V |
2410122024_PAKER-SI2323_C5278892.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
