N Channel Logic Level Enhancement Mode Field Effect Transistor NIKO SEM P5506BDG with TO 252 Package
Key Attributes
Model Number:
P5506BDG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
46pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
587pF@25V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
P5506BDG
Package:
TO-252-2
Product Description
Product Overview
N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for general purpose applications. This transistor is Halogen-Free & Lead-Free, ensuring compliance with environmental standards.
Product Attributes
- Brand: NIKO-SEM
- Model: P5506BDG
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 22 | A |
| Continuous Drain Current | ID | TC = 70 °C | 18 | A |
| Pulsed Drain Current | IDM | 80 | A | |
| Power Dissipation | PD | TC = 25 °C | 50 | W |
| Power Dissipation | PD | TC = 70 °C | 32 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| Lead Temperature | TL | 1/16” from case for 10 sec. | 275 | °C |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Case | RθJc | TYPICAL | 2.5 | °C / W |
| Junction-to-Ambient | RθJA | TYPICAL | 55 | °C / W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 60 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1 - 1.5 - 2.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±250 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 48V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40V, VGS = 0V, TJ = 55 °C | 10 | µA |
| On-State Drain Current | ID(ON) | VDS = 5V, VGS = 10V | 22 | A |
| On-State Drain Current | ID(ON) | VGS = 4.5V, ID = 8A | 59 - 75 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 10A | 42 - 55 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 8A | 59 - 75 | mΩ |
| Forward Transconductance | gfs | VDS = 10V, ID = 10A | 14 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 587 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1MHz | 80 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1MHz | 46 | pF |
| Total Gate Charge | Qg | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A | 12.5 | nC |
| Gate-Source Charge | Qgs | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A | 1.8 | nC |
| Gate-Drain Charge | Qg | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A | 3.7 | nC |
| Turn-On Delay Time | td(on) | VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω | 11 | nS |
| Rise Time | tr | VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω | 8 | nS |
| Turn-Off Delay Time | td(off) | VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω | 19 | nS |
| Fall Time | tf | VDD = 30V ID ≈ 1A, VGS = 10V, RGEN = 6Ω | 6 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 22 | A | |
| Forward Voltage | VSD | IF = 1A, VGS = 0V | 1 | V |
2411220148_NIKO-SEM-P5506BDG_C532965.pdf
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