86--136 6733 2386
quality N Channel Power MOSFET PAKER BSS138K with Low RDS on and High Breakdown Voltage in SOT23 Package factory
quality N Channel Power MOSFET PAKER BSS138K with Low RDS on and High Breakdown Voltage in SOT23 Package factory

N Channel Power MOSFET PAKER BSS138K with Low RDS on and High Breakdown Voltage in SOT23 Package

Key Attributes
Model Number: BSS138K
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-
RDS(on):
4Ω@3.3V,0.2A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Number:
1 N-channel
Output Capacitance(Coss):
3.8pF
Input Capacitance(Ciss):
23pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
910pC@10V
Mfr. Part #:
BSS138K
Package:
SOT-23
Product Description

Product Overview

The BSS138K is an N-Channel Enhancement Mode Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V and 3.3V logic level control, housed in a SOT23 package. This Pb-Free, RoHS Compliant component offers efficient performance with its high breakdown voltage and continuous drain current capabilities.

Product Attributes

  • Brand: (Parker Microelectronics)
  • Origin: Shenzhen, China
  • Package: SOT-23
  • Certifications: PbFree, RoHS Compliant
  • Packing Quantity: 3000
  • Packing Description: Tape/Reel, 7" reel, EIA-481-1
  • Marking: J1.Y

Technical Specifications

Parameter Condition Min Typ Max Unit Notes
Gate-Source Voltage 12 V
Drain-Source Breakdown Voltage VGS=0V, ID=250A 50 V
Maximum Junction Temperature 150 C
Storage Temperature Range -50 150 C
Pulse Drain Current TA=25C 1.8 A
Continuous Drain Current TA=25C 0.5 A
Continuous Drain Current TA=70C 0.4 A
Maximum Power Dissipation TA=25C 0.3 W
Maximum Power Dissipation TA=70C 0.2 W
Thermal Resistance Junction-Ambient 400 C/W
Gate Threshold Voltage VDS=VGS, ID=250A 0.6 1.0 1.5 V
Zero Gate Voltage Drain Current VDS=50V, VGS=0V (TA=25) 1 A
Zero Gate Voltage Drain Current VDS=40V, VGS=0V (TA=125) 100 A
Gate-Body Leakage Current VGS=12V, VDS=0V 100 nA
Drain-Source On-State Resistance VGS=3.3V, ID=0.2A 4
Drain-Source On-State Resistance VGS=4.5V, ID=0.3A 2.5
Drain-Source On-State Resistance VGS=10V, ID=0.5A 1.2
Input Capacitance VDS=30V, VGS=0V, f=1MHz 23 pF
Output Capacitance VDS=30V, VGS=0V, f=1MHz 3.8 pF
Reverse Transfer Capacitance VDS=30V, VGS=0V, f=1MHz 1.5 pF
Total Gate Charge VDS=30V, ID=0.5A, VGS=10V 0.91 nC
Gate Source Charge VDS=30V, ID=0.5A, VGS=10V 0.18 nC
Gate Drain Charge VDS=30V, ID=0.5A, VGS=10V 0.3 nC
Turn on Delay Time VDD=30V, ID=0.3A, RG=3.3, VGS=10V 3.5 ns
Turn on Rise Time VDD=30V, ID=0.3A, RG=3.3, VGS=10V 6 ns
Turn Off Delay Time VDD=30V, ID=0.3A, RG=3.3, VGS=10V 5.9 ns
Turn Off Fall Time VDD=30V, ID=0.3A, RG=3.3, VGS=10V 20 ns
Source drain current(Body Diode) TA=25 0.2 A
Forward on voltage Tj=25, ISD=0.5A, VGS=0V 0.78 1.2 V

2410121955_PAKER-BSS138K_C18221542.pdf

Related Products
quality Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications factory
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.