NIKO SEM PK501BA P Channel Logic Level MOSFET with Low Conduction Loss and High ESD Protection Rating
Key Attributes
Model Number:
PK501BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
43A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
364pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.822nF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
PK501BA
Package:
PDFN-8(5x6)
Product Description
Product Overview
The PK501BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various protection and switching applications. It features low RDS(on) for minimal conduction losses, an optimized gate charge for reduced switching losses, and ESD protection up to 2KV. This device is PbFree, Halogen Free, and RoHS compliant, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: NIKO-SEM
- Model: PK501BA
- Package: PDFN 5x6P
- Compliance: PbFree, Halogen Free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Limits | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1 / -1.5 / -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = 25V | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | uA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = 0V, TJ = 125 C | -10 | uA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -13A | 8.4 / 12 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -13A | 5.7 / 7 | m |
| Forward Transconductance | gfs | VDS = -5V, ID = -13A | 40 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 2822 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = -15V, f = 1MHz | 452 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -15V, f = 1MHz | 364 | pF |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 4 | |
| Total Gate Charge | Qg(VGS=-10V) | VDS =-15V, ID = -13A | 60 | nC |
| Total Gate Charge | Qg(VGS=-4.5V) | VDS =-15V, ID = -13A | 30 | nC |
| Gate-Source Charge | Qgs | VDS =-15V, ID = -13A | 6.1 | nC |
| Gate-Drain Charge | Qgd | VDS =-15V, ID = -13A | 14 | nC |
| Turn-On Delay Time | td(on) | VDS = -15V, ID -13A, VGS = -10V, RGS = 6 | 39 | nS |
| Rise Time | tr | VDS = -15V, ID -13A, VGS = -10V, RGS = 6 | 26 | nS |
| Turn-Off Delay Time | td(off) | VDS = -15V, ID -13A, VGS = -10V, RGS = 6 | 161 | nS |
| Fall Time | tf | VDS = -15V, ID -13A, VGS = -10V, RGS = 6 | 100 | nS |
| Continuous Current | IS | -19 | A | |
| Forward Voltage | VSD | IF = -13A, VGS = 0V | -1.3 | V |
| Reverse Recovery Time | trr | IF = -13A , dlF/dt = 100 A / S | 23 | nS |
| Reverse Recovery Charge | Qrr | IF = -13A , dlF/dt = 100 A / S | 6 | nC |
| Continuous Drain Current | ID | TC = 25 C | -43 | A |
| Continuous Drain Current | ID | TC = 100 C | -27 | A |
| Continuous Drain Current | ID | TA = 25 C | -13 | A |
| Continuous Drain Current | ID | TA = 70 C | -10 | A |
| Pulsed Drain Current | IDM | -110 | A | |
| Avalanche Current | IAS | -38 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 72 | mJ |
| Power Dissipation | PD | TC = 25 C | 25 | W |
| Power Dissipation | PD | TC = 100 C | 10 | W |
| Power Dissipation | PD | TA = 25 C | 2.2 | W |
| Power Dissipation | PD | TA = 70 C | 1.4 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | C | |
| Junction-to-Ambient Thermal Resistance | RJA | Typical | 56 | C / W |
| Junction-to-Case Thermal Resistance | RJC | Typical | 5 | C / W |
2411220317_NIKO-SEM-PK501BA_C384596.pdf
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