Compact integrated digital transistor onsemi NSVMUN5111DW1T3G suitable for automotive and industrial circuits
Key Attributes
Model Number:
NSVMUN5111DW1T3G
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
NSVMUN5111DW1T3G
Package:
SOT-363
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network of two resistors (base resistor and base-emitter resistor) into a single device. This design eliminates the need for external bias resistors, simplifying circuit design, reducing board space, and lowering component count. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, with S and NSV prefixes available for automotive and other applications requiring unique site and control change requirements, AEC-Q101 Qualified and PPAP Capable.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AEC-Q101 Qualified, PPAP Capable (for S and NSV prefixes), RoHS Compliant, Pb-Free, Halogen Free/BFR Free
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 | SOT-363, SOT-563, SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 10 k | 10 k |
| Characteristic | Symbol | MUN5111DW1 (SOT-363) Max | MUN5111DW1 (SOT-363) Max | NSBA114EDXV6 (SOT-563) Max | NSBA114EDXV6 (SOT-563) Max | NSBA114EDP6 (SOT-963) Max | NSBA114EDP6 (SOT-963) Max | Unit |
| Total Device Dissipation (One Junction Heated, TA = 25C) | PD | 187 | 256 | 357 | 500 | 231 | 339 | mW |
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 670 | 490 | 350 | 250 | 540 | 464 | C/W |
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | |||||
| Characteristic | Symbol | Min | Typ | Max | Unit |
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | ||
| Emitter-Base Cutoff Current | IEBO | 0.5 | mAdc | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | Vdc | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | ||
| DC Current Gain | hFE | 35 | 60 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | ||
| Input Voltage (off) | Vi(off) | 1.2 | Vdc | ||
| Input Voltage (on) | Vi(on) | 2.2 | Vdc | ||
| Output Voltage (on) | VOL | 0.2 | Vdc | ||
| Output Voltage (off) | VOH | 4.9 | Vdc | ||
| Input Resistor | R1 | 7.0 | 10 | 13 | k |
| Resistor Ratio | R1/R2 | 0.8 | 1.0 | 1.2 |
2411271950_onsemi-NSVMUN5111DW1T3G_C463398.pdf
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