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quality Integrated bias resistor transistor onsemi MUN5316DW1T1G suitable for replacement of single devices in circuits factory
quality Integrated bias resistor transistor onsemi MUN5316DW1T1G suitable for replacement of single devices in circuits factory

Integrated bias resistor transistor onsemi MUN5316DW1T1G suitable for replacement of single devices in circuits

Key Attributes
Model Number: MUN5316DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
6.1kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5316DW1T1G
Package:
SOT-363
Product Description

Product Overview

This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. Designed to replace external bias resistors, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring replacement of single devices and their external resistor bias networks.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: AEC-Q101 Qualified and PPAP Capable (S and NSV Prefix), RoHS Compliant, PbFree, Halogen Free/BFR Free
  • Origin: USA (implied by onsemi)

Technical Specifications

Device Package CollectorBase Voltage (VCBO) CollectorEmitter Voltage (VCEO) Collector Current (IC) Input Forward Voltage (VIN(fwd)) Input Reverse Voltage (VIN(rev)) R1 Shipping
MUN5316DW1 SOT363 50 Vdc 50 Vdc 100 mAdc 30 Vdc 6 Vdc (NPN), 5 Vdc (PNP) 3.3 - 4.7 - 6.1 k 3,000 / Tape & Reel
NSVMUN5316DW1 SOT363 50 Vdc 50 Vdc 100 mAdc 30 Vdc 6 Vdc (NPN), 5 Vdc (PNP) 3.3 - 4.7 - 6.1 k 3,000 / Tape & Reel
NSBC143TPDXV6 SOT563 50 Vdc 50 Vdc 100 mAdc 30 Vdc 6 Vdc (NPN), 5 Vdc (PNP) 3.3 - 4.7 - 6.1 k 4,000 / Tape & Reel
NSVBC143TPDXV6 SOT563 50 Vdc 50 Vdc 100 mAdc 30 Vdc 6 Vdc (NPN), 5 Vdc (PNP) 3.3 - 4.7 - 6.1 k 4,000 / Tape & Reel
nAdc nAdc mAdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc
Characteristic Symbol Min Typ Max Unit Notes
CollectorBase Cutoff Current ICBO - - 100 (VCB = 50 V, IE = 0)
CollectorEmitter Cutoff Current ICEO - - 500 (VCE = 50 V, IB = 0)
EmitterBase Cutoff Current IEBO - - 1.9 (VEB = 6.0 V, IC = 0)
CollectorBase Breakdown Voltage V(BR)CBO 50 - - (IC = 10 A, IE = 0)
CollectorEmitter Breakdown Voltage V(BR)CEO 50 - - (IC = 2.0 mA, IB = 0)
DC Current Gain hFE 160 350 - - (IC = 5.0 mA, VCE = 10 V)
CollectorEmitter Saturation Voltage VCE(sat) - - 0.25 (IC = 10 mA, IB = 0.3 mA)
Input Voltage (off) Vi(off) - 0.6 (NPN)
0.58 (PNP)		 - (VCE = 5.0 V, IC = 100 A)
Input Voltage (on) Vi(on) - 0.9 (NPN)
1.0 (PNP)		 - (VCE = 0.2 V, IC = 10 mA)
Output Voltage (on) VOL - - 0.2 (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
Output Voltage (off) VOH 4.9 - - (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
Characteristic Symbol MUN5316DW1 (SOT363) Max Unit NSBC143TPDXV6 (SOT563) Max Unit Notes
Total Device Dissipation (One Junction Heated) PD 187 mW (@25C)
1.5 mW/C (Derate)		 357 mW (@25C)
2.9 mW/C (Derate)		 (Note 1)
Total Device Dissipation (Both Junctions Heated) PD 250 mW (@25C)
2.0 mW/C (Derate)		 500 mW (@25C)
4.0 mW/C (Derate)		 (Note 3)
Thermal Resistance, Junction to Ambient RJA 670 C/W (One Junction)
490 C/W (Both Junctions)		 350 C/W (One Junction)
250 C/W (Both Junctions)		 (Note 1, 2)
Junction and Storage Temperature Range TJ, Tstg 55 to +150 C -

2410010131_onsemi-MUN5316DW1T1G_C463099.pdf

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