NPN Epitaxial Silicon Switching Transistor PANJIT MMDT4401 R1 00001 Compliant with EU RoHS Directive
Key Attributes
Model Number:
MMDT4401_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMDT4401_R1_00001
Package:
SOT-363
Product Description
MMDT4401 Dual NPN General Purpose Switching Transistor
The MMDT4401 is an NPN epitaxial silicon, planar design general purpose switching transistor. It offers a collector-emitter voltage of 40V and a continuous collector current of 600mA, with a power dissipation of 225mW. This device is lead-free and compliant with EU RoHS 2011/65/EU directive, and features a green molding compound as per IEC61249 Std. (Halogen Free). It is supplied in a SOT-363 plastic package.
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound (Halogen Free)
- Certifications: EU RoHS 2011/65/EU directive compliant
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition |
| Collector - Emitter Voltage | VCEO | 40 | V | |
| Collector - Base Voltage | VCBO | 60 | V | |
| Emitter - Base Voltage | VEBO | 6.0 | V | |
| Collector Current - Continuous | IC | 600 | mA | |
| Max Power Dissipation | PTOT | 225 | mW | (Note1) Transistor mounted on FR-4 board 1.0X0.85X0.062 in. |
| Collector - Emitter Breakdown Voltage | V (BR)CEO | 40 | V | IC=1.0mA, IB=0 |
| Collector - Base Breakdown Voltage | V (BR)CBO | 60 | V | IC=100uA, IE=0 |
| Emitter - Base Breakdown Voltage | V (BR)EBO | 6.0 | V | IE=100uA, IC=0 |
| Base Cutoff Current | IBL | 100 | nA | VCE=35V, VEB=0.4V |
| Collector Cutoff Current | ICEX | 100 | nA | VCE=35V, VEB=0.4V |
| DC Current Gain | hFE | 20-300 | IC=0.1mA, VCE=1.0V to IC=500mA, VCE=2.0V | |
| Collector - Emitter Saturation Voltage | V CE(SAT) | 0.40 - 0.75 | V | IC=150mA, IB=15mA to IC=500mA, IB=50mA |
| Base - Emitter Saturation Voltage | V BE(SAT) | 0.75 - 1.20 | V | IC=150mA, IB=15mA to IC=500mA, IB=50mA |
| Collector - Base Capacitance | C CBO | 6.5 | pF | VCB=5V, IE=0, f=1MHz |
| Emitter - Base Capacitance | C EBO | 30 | pF | VCB=0.5V, IC=0, f=1MHz |
| Current Gain - Bandwidth Product | F T | 250 | MHz | VCE=10V, IC=20mA, f=100MHz |
| Delay Time | td | 15 | ns | VCC=30V,VBE=2.0V, IC=150mA,IB1=15mA |
| Rise Time | tr | 20 | ns | VCC=30V,VBE=2.0V, IC=150mA,IB1=15mA |
| Storage Time | ts | 225 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Fall Time | tf | 30 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Junction Temperature | TJ | -55 to 150 | C | |
| Storage Temperature | TSTG | -55 to 150 | C | |
| Thermal Resistance, Junction to Ambient | RJA | 625 | C/W |
2410121605_PANJIT-MMDT4401-R1-00001_C2912878.pdf
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