Digital transistor onsemi MMUN2214LT1G with integrated bias resistors designed to reduce board space
Key Attributes
Model Number:
MMUN2214LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
13kΩ
Resistor Ratio:
0.25
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2214LT1G
Package:
SOT-23
Product Description
Product Description
This series of digital transistors (BRT) integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. They are designed to replace individual components, simplifying circuit design, reducing board space, and decreasing component count. These devices are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes qualifying for automotive and other specific applications. They are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV prefixes)
- Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Device | Part Marking | Package | CollectorBase Voltage (VCBO) | CollectorEmitter Voltage (VCEO) | Collector Current (IC) Continuous | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| MUN2214T1G, SMUN2214T1G | 8D | SC59 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| MMUN2214LT1G, SMMUN2214LT1G | A8D | SOT23 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| MUN5214T1G, SMUN5214T1G | 8D | SC70/SOT323 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| DTC114YET1G, SDTC114YET1G | 8D | SC75 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| DTC114YM3T5G, NSVDTC114YM3T5G | 8D | SOT723 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| NSBC114YF3T5G | J | SOT1123 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 6 Vdc | 10 k | 47 k |
| Characteristic | Symbol | Min | Typ | Max | Unit |
| CollectorBase Cutoff Current | ICBO | 100 | nAdc | ||
| CollectorEmitter Cutoff Current | ICEO | 500 | nAdc | ||
| EmitterBase Cutoff Current | IEBO | 0.2 | mAdc | ||
| CollectorBase Breakdown Voltage | V(BR)CBO | 50 | Vdc | ||
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | ||
| DC Current Gain | hFE | 80 | 140 | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | ||
| Input Voltage (off) | Vi(off) | 0.7 | 0.5 | Vdc | |
| Input Voltage (on) | Vi(on) | 1.4 | 0.8 | Vdc | |
| Output Voltage (on) | VOL | 0.2 | Vdc | ||
| Output Voltage (off) | VOH | 4.9 | Vdc | ||
| Input Resistor | R1 | 7.0 | 10 | 13 | k |
| Resistor Ratio | R1/R2 | 0.17 | 0.21 | 0.25 |
2410121952_onsemi-MMUN2214LT1G_C82089.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
