NPN transistor PANJIT MMBT3904 R1 00101 with 300MHz transition frequency and EU RoHS 2 certification
Key Attributes
Model Number:
MMBT3904_R1_00101
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904_R1_00101
Package:
SOT-23
Product Description
MMBT3904 NPN General Purpose Switching Transistor
The MMBT3904 is an NPN epitaxial silicon planar design general-purpose switching transistor. It offers a collector-emitter voltage of 40V and a collector current of 200mA, with a transition frequency exceeding 300MHz. This device is lead-free and complies with EU RoHS 2.0 standards, making it suitable for various electronic applications requiring reliable switching performance.
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound
- Certifications: EU RoHS 2.0
- Case: SOT-23
- Terminals: Solderable per MIL-STD-750, Method 2026
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Breakdown Voltage | V(BR)CEO | IC = 0.1mA, IB = 0 | 40 | V | ||
| V(BR)CBO | IC = 10uA, IE = 0 | 60 | V | |||
| V(BR)EBO | IE = 10uA, IC = 0 | 6 | V | |||
| Cut-off Base Current | IBL | VCE = 30V, VEB = 0.3V | 20 | nA | ||
| Collector Cut-off Current | ICEX | VCE = 30V, VEB = 0.3V | 50 | nA | ||
| DC Current Gain | hFE | IC = 0.1mA, VCE = 1V | 30 | |||
| IC = 1.0mA, VCE = 1V | 70 | 100 | ||||
| IC = 10mA, VCE = 1V | 100 | 200 | ||||
| IC = 50mA, VCE = 1V | 60 | |||||
| IC = 100mA, VCE = 1V | 40 | |||||
| Saturation Voltage | VCE(SAT) | IC = 10mA, IB = 1mA | 0.200 | 0.300 | V | |
| VCE(SAT) | IC = 50mA, IB = 5mA | 0.300 | 0.500 | V | ||
| Base Saturation Voltage | VBE(SAT) | IC = 10mA, IB = 1mA | 0.560 | 0.700 | V | |
| VBE(SAT) | IC = 50mA, IB = 5mA | 0.580 | 0.900 | V | ||
| Capacitance | Cobo | VCB = 10V, f = 1MHz | 4.0 | pF | ||
| Cebo | VEB = 0.5V, f = 1MHz | 0.8 | pF | |||
| Switching Time | tr | VCC = 3V, IC = 10mA, IB1 = 1mA | 35 | ns | ||
| tf | VCC = 3V, IC = 10mA, IB1 = 1mA | 50 | ns | |||
| Power Dissipation | PTOT | Note 1 | 0.225 | W | ||
| Thermal Resistance | RJA | Note 1 | 555 | C/W | ||
| Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature | TSTG | -55 | 150 | C |
2410122018_PANJIT-MMBT3904-R1-00101_C3001253.pdf
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