300V NPN transistor PANJIT MMBTA42 R1 00001 with 250mW power dissipation and RoHS 2 0 compliant design

Key Attributes
Model Number: MMBTA42_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
50MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA42_R1_00001
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is an NPN silicon planar high voltage transistor designed for various applications requiring a 300V breakdown voltage and a power dissipation of 250mW. It features a lead-free design compliant with EU RoHS 2.0 and uses a green molding compound. The transistor is housed in a SOT-23 plastic package.

Product Attributes

  • Brand: Panjit International Inc.
  • Material: NPN silicon, planar design
  • Color: Green molding compound
  • Certifications: EU RoHS 2.0 compliant

Technical Specifications

ParameterSymbolValueUnitsNotes
Collector-Emitter VoltageV CEO300V
Collector Current (Continuous)I C500mA
Max Power DissipationP TOT250mWTransistor mounted on FR-5 board 1 x 0.75 x 0.062 in.
Collector-Emitter Breakdown VoltageV (BR)CEO300VI C=1mA, I B=0
Collector-Base Breakdown VoltageV (BR)CBO300VI C=100A, I E=0
Emitter-Base Breakdown VoltageV (BR)EBO6VI E=100A, I C=0
Collector Cut-off CurrentI CBO100nAV CB=200V, I E=0V
Emitter Cut-off CurrentI EBO100nAV CE=6V, I C=0
DC Current GainhFE25 - 40V CE=10V, I C=1.0mA to 30mA
Collector-Emitter Saturation VoltageV CE(SAT)0.5VI C=20mA, I B=2mA
Base-Emitter Saturation VoltageV BE(SAT)0.9VI C=20mA, I B=2mA
Collector-Base CapacitanceC CB3pFV CB=20V, I E=0, f=1MHz
Collector Gain - Bandwidth Productf T50MHzI C=10mA, V CE=20V, f=100MHz

2410121549_PANJIT-MMBTA42-R1-00001_C360747.pdf

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