PANJIT MMBT5551 R1 00101 NPN Silicon Transistor with High Voltage Capability and RoHS 2.0 Compliance
Key Attributes
Model Number:
MMBT5551_R1_00101
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5551_R1_00101
Package:
SOT-23
Product Description
MMBT5551 NPN High Voltage Transistor
The MMBT5551 is an NPN silicon planar design transistor offering high voltage capability with a collector-emitter voltage of 160V and a continuous collector current of 600mA. It is designed for applications requiring reliable performance and is compliant with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 standard.
Product Attributes
- Brand: Panjit International Inc.
- Material: Silicon, Planar Design
- Color: Green (molding compound)
- Certifications: EU RoHS 2.0 compliant
- Case: SOT-23, Plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0003 ounces, 0.0084 grams
- Marking: M51
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition |
| Collector-Emitter Voltage | VCEO | 160 | V | |
| Collector-Base Voltage | VCBO | 180 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current Continuous | IC | 600 | mA | |
| Max Power Dissipation (Note 1) | PD | 250 | mW | (TA=25 oC) |
| Thermal Resistance, Junction to Ambient (Note 1) | JA | 325 | C/W | (TA=25 oC) |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | C | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | IC=1mA,IB=0A |
| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | V | IC=100uA,IE=0A |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10uA,IC=0A |
| Collector-Base Cut-off Current | ICBO | 50 | nA | VCB=120V,IE=0A |
| Emitter-Base Cut-off Current | IEBO | 50 | nA | VEB=4V,IC=0A |
| DC Current Gain | hFE | 80-250 | VCE=5V, IC=1mA to 50mA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 150-200 | mV | IC=10mA to 50mA, IB=1mA to 5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1 | V | IC=10mA to 50mA, IB=1mA to 5mA |
| Collector-Base Capacitance | CCBO | 6 | pF | VCB=10V,IE=0A,f=1MHz |
| Emitter-Base Capacitance | CEBO | 30 | pF | VEB=500mV,IC=0A,f=1MHz |
| Transition Frequency | FT | 100-300 | MHz | IC=10mA,VCE=10V,f=100MHz |
2205091530_PANJIT-MMBT5551-R1-00101_C3001254.pdf
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