Medium speed switching diode onsemi BAV199LT1G featuring AEC Q101 qualification and PPAP capability
Key Attributes
Model Number:
BAV199LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@70V
Operating Junction Temperature Range:
-65℃~+150℃
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAV199LT1G
Package:
SOT-23
Product Description
Product Overview
The BAV199L and SBAV199L are dual series switching diodes designed for medium speed switching applications and feature low leakage current. The 'S' prefix denotes suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified (S Prefix), PPAP Capable (S Prefix), Pb-Free, Halogen Free/BFR Free, RoHS Compliant
- Material: Not specified (standard semiconductor materials)
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Rating Symbol | Value | Unit | Description |
| VR | 70 | Vdc | Reverse Voltage |
| IF | 215 | mAdc | Forward Current |
| IFM(surge) | 500 | mAdc | Peak Forward Surge Current |
| VRRM | 70 | Vdc | Repetitive Peak Reverse Voltage |
| IF(AV) | 715 | mAdc | Average Rectified Forward Current (Note 1) |
| IFRM | 450 | mAdc | Repetitive Peak Forward Current |
| IFSM (t=1.0 s) | 0.5 | Adc | Non-Repetitive Peak Forward Current |
| IFSM (t=1.0 ms) | 1.0 | Adc | Non-Repetitive Peak Forward Current |
| IFSM (t=1.0 s) | 2.0 | Adc | Non-Repetitive Peak Forward Current |
| PD (FR-5 Board) | 225 | mW | Total Device Dissipation (Note 1) |
| Derate above 25C (FR-5 Board) | 1.8 | mW/C | Derate above 25C |
| R JA (FR-5 Board) | 556 | C/W | Thermal Resistance, Junction-to-Ambient |
| PD (Alumina Substrate) | 300 | mW | Total Device Dissipation (Note 2) |
| Derate above 25C (Alumina Substrate) | 2.4 | mW/C | Derate above 25C |
| R JA (Alumina Substrate) | 417 | C/W | Thermal Resistance, Junction-to-Ambient |
| TJ, Tstg | -65 to +150 | C | Junction and Storage Temperature |
| Characteristic | Symbol | Min | Max | Unit | Description |
| Reverse Breakdown Voltage | V(BR) | 70 | - | Vdc | (I(BR) = 100 Adc) |
| Reverse Voltage Leakage Current (VR = 70 Vdc) | IR | - | 5.0 | nAdc | |
| Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150C) | IR | - | 80 | nAdc | |
| Diode Capacitance | CD | - | 2.0 | pF | (VR = 0 V, f = 1.0 MHz) |
| Forward Voltage (IF = 1.0 mAdc) | VF | - | 900 | mVdc | |
| Forward Voltage (IF = 10 mAdc) | VF | - | 1000 | mVdc | |
| Forward Voltage (IF = 50 mAdc) | VF | - | 1100 | mVdc | |
| Forward Voltage (IF = 150 mAdc) | VF | - | 1250 | mVdc | |
| Reverse Recovery Time | trr | - | 3.0 | ns | (IF = IR = 10 mAdc) (Figure 1) |
2410010303_onsemi-BAV199LT1G_C145516.pdf
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