N Channel 100V Enhancement Mode Power MOSFET NH NSS085N100S with Low RDS ON and Ultra Low Gate Charge
Key Attributes
Model Number:
NSS085N100S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
80pF@35V
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
2nF@35V
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
NSS085N100S
Package:
TO-252
Product Description
Product Overview
The NSS085N100S is an N-channel 100V Enhancement Mode Power MOSFET from Niu Hang. Engineered with advanced trench MOSFET technology, it offers low RDS(ON) and ultra-low gate charge, making it highly efficient. This RoHS compliant and rigorously tested component is designed for high power and current handling capabilities. It is suitable for a variety of applications including PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor drivers, and POL applications.
Product Attributes
- Brand: Niu Hang (NH)
- Technology: Advanced trench MOSFET
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | ||
|---|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V | ||
| Drain-Source On Resistance | RDS(ON) | VGS=10V, ID=2A | - | 7.5 | 11.0 | m | ||
| Total Gate Charge | Qg | VDS=50V, ID=50A, VGS=10V | - | 43 | - | nC | ||
| Absolute Maximum Ratings | ||||||||
| Drain-Source Voltage | VDS | - | - | - | 100 | V | ||
| Gate-Source Voltage | VGS | - | -20 | - | 20 | V | ||
| Continuous Drain Current | ID | Ta=25 | - | - | 100 | A | ||
| Continuous Drain Current | ID | Ta=100 | - | - | 64 | A | ||
| Drain Current-Pulsed | IDM | - | - | - | 300 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | - | - | 100 | W | ||
| Power Dissipation Derating Factor above 25 | DF | - | 0.84 | - | - | W/ | ||
| Junction Temperature | TJ | - | -55 | - | 150 | |||
| Storage temperature range | TSTD | - | -55 | - | 150 | |||
| Avalanche Current,Single pulse | IAS | L=0.5mH, VDD=50V | - | 38 | - | A | ||
| Single Pulse Avalanche Energy | EAS | L=0.5mH, IAS=38A, Starting TJ =25 | - | 150 | - | mJ | ||
| Thermal Characteristcs | ||||||||
| Thermal Resistance Junction to Ambient | RJA | (Note 2) | - | - | 4.5 | /W | ||
| Thermal Resistance Junction-Case | RJC | (Note 2) | - | - | 1.20 | /W | ||
| Electrical Characteristics | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 2.0 | 3.0 | V | ||
| Drain-Source On Resistance | RDS(ON) | VGS=10V, ID=2A | - | 7.5 | 11.0 | m | ||
| Forward Transconductance | gFS | VDS=5V, ID=10A | - | 12 | - | S | ||
| Input Capacitance | Ciss | VDS=0V, VGS=0V, f=1.0MHz | - | 2000 | - | pF | ||
| Output Capacitance | Coss | VDS=0V, VGS=0V, f=1.0MHz | - | 820 | - | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=0V, VGS=0V, f=1.0MHz | - | 80 | - | pF | ||
| Total Gate Charge | Qg | VDS=50V, ID=50A, VGS=10V | - | 43 | - | nC | ||
| Gate-Source Charge | Qgs | VDS=50V, ID=50A, VGS=10V | - | 6.5 | - | nC | ||
| Gate-Drain Charge | Qgd | VDS=50V, ID=50A, VGS=10V | - | 8.0 | - | nC | ||
| Turn-On Delay Time | td(on) | VDS=50V, ID=50A, VGS=10V, RG=3 | - | 9 | - | ns | ||
| Turn-On Rise Time | tr | VDS=50V, ID=50A, VGS=10V, RG=3 | - | 7 | - | ns | ||
| Turn-Off Delay Time | td(off) | VDS=50V, ID=50A, VGS=10V, RG=3 | - | 50 | - | ns | ||
| Turn-Off Rise Time | tf | VDS=50V, ID=50A, VGS=10V, RG=3 | - | 11 | - | ns | ||
| Max. Diode Forward Cuurent | IFM | - | - | - | 100 | A | ||
| Max. Pulsed Forward Cuurent | IFM | - | - | - | 300 | A | ||
| Diode Forward Voltage | VSD | IF=20A, VGS=0V | - | 0.8 | 1.2 | V | ||
| Reverse Recovery Time | trr | IF=20A, di/dt=500A/us | - | 27 | - | ns | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=500A/us | - | 113 | - | C | ||
| OUTLINE DIMENSIONS (TO-252) | ||||||||
| Dim. | Milimeters | Inches | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | 6.400 | - | 6.800 | 0.252 | - | 0.268 | ||
| B | 5.200 | - | 6.200 | 0.205 | - | 0.244 | ||
| C | 2.100 | - | 2.500 | 0.083 | - | 0.098 | ||
| D | 4.800 | - | 5.500 | 0.189 | - | 0.217 | ||
| E | 1.000 | - | 1.600 | 0.039 | - | 0.063 | ||
| F | 0.500 | - | 1.000 | 0.020 | - | 0.039 | ||
| G | 2.100 | - | 2.500 | 0.083 | - | 0.098 | ||
| H | 2.800 | - | 3.500 | 0.110 | - | 0.138 | ||
| J | 0.400 | - | 0.600 | 0.016 | - | 0.024 | ||
| K | - | 0.080 | - | - | 0.003 | - | ||
| L | 0.900 | - | 1.400 | 0.035 | - | 0.055 | ||
| M | - | 0.500 | - | - | 0.020 | - | ||
| N | 1.300 | - | 1.800 | 0.051 | - | 0.071 | ||
2410121853_NH-NSS085N100S_C7427705.pdf
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