Automotive qualified dual switching diodes onsemi BAV99LT1G with compact SOT23 package and PbFree materials
Key Attributes
Model Number:
BAV99LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@100V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Series Connection
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAV99LT1G
Package:
SOT-23
Product Description
Product Overview
The BAV99L and SBAV99L are dual series switching diodes designed for automotive and general-purpose applications. They feature AEC-Q101 qualification and are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. These diodes offer high performance in a compact SOT-23 package.
Product Attributes
- Brand: ON Semiconductor
- Origin: USA (implied by website and contact info)
- Material: Pb-Free, Halogen Free/BFR Free
- Certifications: AEC-Q101 Qualified, PPAP Capable
- Package: SOT-23 (TO-236)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
| MAXIMUM RATINGS (Each Diode) | ||||
| Reverse Voltage | VR | 100 | Vdc | |
| Forward Current | IF | 215 | mAdc | |
| Peak Forward Surge Current | IFM(surge) | 500 | mAdc | |
| Repetitive Peak Reverse Voltage | VRRM | 100 | V | |
| Average Rectified Forward Current | IF(AV) | 715 | mA | (averaged over any 20 ms period) |
| Repetitive Peak Forward Current | IFRM | 450 | mA | |
| Non-Repetitive Peak Forward Current | IFSM | 2.0 | A | t = 1.0 s |
| 1.0 | A | t = 1.0 ms | ||
| 0.5 | A | t = 1.0 s | ||
| THERMAL CHARACTERISTICS | ||||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | TA = 25C |
| 1.8 | mW/C | Derate above 25C | ||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | C/W | |
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25C |
| 2.4 | mW/C | Derate above 25C | ||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | C/W | |
| Junction and Storage Temperature Range | TJ, Tstg | -65 to +150 | C | |
| OFF CHARACTERISTICS (Each Diode) | ||||
| Reverse Breakdown Voltage (I(BR) = 100 A) | V(BR) | 100 | Vdc | |
| Reverse Voltage Leakage Current | IR | 1.0 | Adc | VR = 100 Vdc |
| 30 | Adc | VR = 25 Vdc, TJ = 150C | ||
| 50 | Adc | VR = 70 Vdc, TJ = 150C | ||
| Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | 1.5 | pF | |
| Forward Voltage (IF = 1.0 mAdc) | VF | 715 | mVdc | IF = 1.0 mAdc |
| 855 | mVdc | IF = 10 mAdc | ||
| 1000 | mVdc | IF = 50 mAdc | ||
| 1250 | mVdc | IF = 150 mAdc | ||
| Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc, RL = 100 ) | trr | 6.0 | ns | |
| Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) | VFR | 1.75 | V | |
2410010303_onsemi-BAV99LT1G_C82480.pdf
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