N Channel Trench Power MOSFET NH NSH079N15C featuring low RDS ON for switching in automotive electronics and motor drives
Key Attributes
Model Number:
NSH079N15C
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
113A
RDS(on):
7.9mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12.2pF@75V
Number:
1 N-channel
Pd - Power Dissipation:
273W
Input Capacitance(Ciss):
4.357nF@75V
Gate Charge(Qg):
52nC
Mfr. Part #:
NSH079N15C
Package:
TO-220C
Product Description
Product Overview
The NSH079N15C from Guangdong Niuhang Specification Electronic Technology Co., Ltd. is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for improved efficiency, low gate charge for fast switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested and is suitable for DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NSH079N15C
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Package: TO-220C
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||
| Drain-Source Voltage | VDS Min.@Tj | 150 | V | ||||
| Continuous Drain Current | Min.@Ta | 113 | A | ||||
| RDS(ON) Type | @10V | 7.90 | m | ||||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Voltage | VDS | 150 | V | ||||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 113 | A | |||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 90 | A | |||
| Drain Current-Pulsed (Note 1) | TJ< 175 | IDM | 452 | A | |||
| Maximum Power Dissipation | Ta= 25 | PD | 273 | W | |||
| Maximum Power Dissipation | Ta= 100 | PD | 136 | W | |||
| Power Dissipation Derating Factor | Above 25 | DF | 1.82 | W/ | |||
| Junction Temperature | TJ | -55 | 175 | ||||
| Storage Temperature Range | TSTD | -55 | 175 | ||||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 36 | A | |||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 75 V | EAS | 324 | mJ | |||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | |||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 60 | /W | |||
| Thermal Resistance Junction-Case | Device Mounted On 1 in FR-4 Board With 2oz | RJC | 0.55 | /W | |||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | |||||||
| Static off Characteristics | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 150 | V | |||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.143 | V/ | |||
| Drain-Source Leakage Current | VDS= 150 V,VGS=0V | I DSS | 1 | uA | |||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | 100 | nA | |||
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | 70 | S | |||
| Static on Characteristics | |||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | 7.90 | 8.80 | m | ||
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | 9.09 | 11.79 | m | ||
| Dynamic Characteristics | |||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 0.93 | ||||
| Input Capacitance | VDS= 75 V | C iss | 4357.0 | pF | |||
| Output Capacitance | VGS= 0 V | C oss | 330.0 | pF | |||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 12.2 | pF | |||
| Switching Paramters (Test Circuit & Waveform See Fig.14) | |||||||
| Turn-On Delay Time | VDS= 75 V | t d(on) | 19.2 | ns | |||
| Turn-On Rise Time | VGS= 10 V | t r | 9.8 | ns | |||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | 30.1 | ns | |||
| Turn-Off Rise Time | RG= 10 | t f | 12.6 | ns | |||
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | |||||||
| Total Gate Charge | VDS= 75 V | Q g | 52.0 | nC | |||
| Gate-Source Charge | VGS= 10 V | Q gs | 18.7 | nC | |||
| Gate-Drain Charge | ID= 20 A | Q gd | 5.0 | nC | |||
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | |||||||
| Max. Diode Forward Cuurent | I S | 113 | A | ||||
| Max. Pulsed Forward Cuurent | I SM | 396 | A | ||||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | 0.90 | 1.26 | V | ||
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | 80.0 | ns | |||
| Reverse Recovery Charge | VGS= 10 V,VDS= 75 V | Q rr | 160.0 | nC | |||
| Package Dimensions (TO-220C) | |||||||
| Dimension | Min. | Typ. | Max. | Min. | Typ. | Max. | Unit |
| A | 9.50 | 10.50 | 0.37 | 0.41 | |||
| B | 1.10 | 1.65 | 0.04 | 0.06 | |||
| C | 4.15 | 4.95 | 0.16 | 0.19 | |||
| D | 0.25 | 0.65 | 0.01 | 0.03 | |||
| E | 14.50 | 16.70 | 0.57 | 0.66 | |||
| F | 8.40 | 9.95 | 0.33 | 0.39 | |||
| G | 12.15 | 14.30 | 0.48 | 0.56 | |||
| H | 3.00 | 3.80 | 0.12 | 0.15 | |||
| J | 1.05 | 1.60 | 0.04 | 0.06 | |||
| K | 0.65 | 0.95 | 0.03 | 0.04 | |||
| M | 2.10 | 2.90 | 0.08 | 0.11 | |||
| O | 3.20 | 4.10 | 0.13 | 0.16 | |||
| P | 2.45 | 3.10 | 0.10 | 0.12 | |||
| Packing Information | |||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | ||
| TO-220C | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 | ||
2504101957_NH-NSH079N15C_C46352558.pdf
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