N Channel Trench Power MOSFET NH NTH040N06C Featuring 60 Volt 150 Ampere Ratings in TO 220C Package
Key Attributes
Model Number:
NTH040N06C
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
RDS(on):
4mΩ@10V,75A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Number:
1 N-channel
Output Capacitance(Coss):
610pF
Pd - Power Dissipation:
221W
Input Capacitance(Ciss):
5.26nF@30V
Gate Charge(Qg):
130nC@30V
Mfr. Part #:
NTH040N06C
Package:
TO-220C
Product Description
Product Overview
The NTH040N06C is an N-Channel Enhancement Mode Trench Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. It features NH's Advanced Trench Technology, offering low Rds(on) for reduced on-state loss and high EAS for enhanced reliability. This MOSFET is designed for applications such as DC-DC converters, Battery Management Systems (BMS), printed circuit board control circuits, and Uninterruptible Power Supplies (UPS). Its key characteristics include a voltage rating of 60 Volts and a current rating of 150 Amperes, packaged in a TO-220C form factor.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd
- Model: NTH040N06C
- Technology: NH's Advanced Trench Technology
- Package: TO-220C
- Certifications: RoHS COMPLIANT, Pb-Free
- Origin: China (implied by company name and datasheet)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | @Tj | VDS | 60 | V | ||
| Continuous Drain Current | @Ta | ID | 150 | A | ||
| Drain-Source On Resistance | @10V | RDS(ON) | 3 | 4.0 | m | |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 150 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 120 | A | ||
| Drain Current-Pulse | TJ< 175 | IDM | 600 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 221 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 110 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.47 | W/ | ||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 60 | A | ||
| Single Pulse Avalanche Energy | L= 0.5 mH | EAS | 900 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Junction Temperature | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTD | -55 | 175 | |||
| Thermal Resistance Junction To Ambient | Still Air Environment | RJA | 62.5 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat. | RJC | 0.68 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BVDSS | 60 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BVDSS/TJ | 0.06 | -- | V/ | |
| Drain-Source Leakage Current | VDS= 60 V,VGS=0V | IDSS | -- | 1 | uA | |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | IGSS | -- | 100 | nA | |
| Forward Transconductance | ID= 20.0 A,VDS= 5 V | gfs | 80.0 | -- | S | |
| Gate Threshold Voltage | VGS= VDS ID=250uA | VGS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20.0 A,VGS= 10.0 V | RDS(ON) | 3.0 | 4.0 | m | |
| Drain-Source On Resistance | ID= 20.0 A,VGS= 4.5 V | RDS(ON) | 3.9 | 6.0 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | VDS= 30 V | Ciss | 5450.0 | -- | pF | |
| Output Capacitance | VGS= 0 V | Coss | 610.0 | -- | pF | |
| Reverse Transfer Capacitance | F= 1 MHZ | Crss | 480.0 | -- | pF | |
| Switching Parameters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 30 V | td(on) | 25.0 | -- | ns | |
| Turn-On Rise Time | VGS= 10.0 V | tr | 23.0 | -- | ns | |
| Turn-Off Delay Time | RG= 10.0 | td(off) | 90.0 | -- | ns | |
| Turn-Off Rise Time | tf | 38.0 | -- | ns | ||
| Gate Charge Parameters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 30 V | Qg | 130.0 | -- | nC | |
| Gate-Source Charge | VGS= 10.0 V | Qgs | 23.0 | -- | nC | |
| Gate-Drain Charge | ID= 20.0 A | Qgd | 57.0 | -- | nC | |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Current | IS | -- | 150 | A | ||
| Max. Pulsed Forward Current | ISM | -- | 450 | A | ||
| Diode Forward Voltage | ID= 20.0 A,VGS=0V | VSD | 0.85 | 1.5 | V | |
| Reverse Recovery Time | IS= 20.0 A,di/dt= 100 A/us | trr | 60.0 | -- | ns | |
| Reverse Recovery Charge | VGS= 0.0 V | Qrr | 80.0 | -- | nC | |
| Reverse Recovery Current | IRRM | -- | 2.7 | A | ||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | Rg | 0.0 | -- | ||
| OUTLINE DRAWINGS | ||||||
| Package Type | Package Code | Weight Approx(g/Pcs) | Package Method | Quantity (Pcs/Min. Pack.) | Quantity (Pcs/Inner Box) | Quantity (Pcs/Carton) |
| TO-220C | P1 | 2.057 | Tube | 50 | 1000 | 5000 |
2508201745_NH-NTH040N06C_C7427706.pdf
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