AECQ101 qualified onsemi BAS19LT1G diode with 385mW power dissipation and automotive grade reliability
Key Attributes
Model Number:
BAS19LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100nA@100V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
120V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAS19LT1G
Package:
SOT-23
Product Description
Product Overview
The BAS19L, BAS20L, BAS21L, and BAS21DW5 are high voltage switching diodes designed for various applications. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The S and NSV prefixes indicate suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified (S and NSV prefixes)
- Compliance: Pb-Free, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Model | Continuous Reverse Voltage (Vdc) | Repetitive Peak Reverse Voltage (Vdc) | Continuous Forward Current (mAdc) | Peak Forward Surge Current (A) | Junction and Storage Temperature Range (C) | Power Dissipation (mW) | Diode Capacitance (pF) | Reverse Recovery Time (ns) |
|---|---|---|---|---|---|---|---|---|
| BAS19L | 120 | 120 | 200 | 2 | -55 to +150 | 385 | 5.0 | 50 |
| BAS20L | 200 | 200 | 200 | 2 | -55 to +150 | 385 | 5.0 | 50 |
| BAS21L | 250 | 250 | 200 | 2 | -55 to +150 | 385 | 5.0 | 50 |
| BAS21DW5 | 250 | 250 | 200 | 2 | -55 to +150 | 385 | 5.0 | 50 |
2409302136_onsemi-BAS19LT1G_C232582.pdf
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