Schottky barrier diode onsemi MBRS260T3G suitable for automotive and industrial power supply circuits
Key Attributes
Model Number:
MBRS260T3G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
60A
Reverse Leakage Current (Ir):
200uA@60V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
630mV@2A
Current - Rectified:
2A
Mfr. Part #:
MBRS260T3G
Package:
SMB(DO-214AA)
Product Description
Product Overview
This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. It offers a compact package with J-Bend leads ideal for automated handling, a highly stable oxide-passivated junction, and a guard-ring for over-voltage protection. The NRVB prefix is available for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for NRVB prefix)
- Material: Metal-to-silicon power rectifier with epitaxial construction, oxide passivation, and metal overlay contact.
- Package: SMB (Surface Mount Package)
- Features: Pb-Free Devices, Compact Package with J-Bend Leads, Highly Stable Oxide Passivated Junction, Guard-Ring for Over-Voltage Protection, Low Forward Voltage Drop.
Technical Specifications
| Rating | Symbol | Value | Unit | Conditions |
| Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage | VRRM, VRWM, VR | 60 | V | |
| Average Rectified Forward Current | IO | 2.0 | A | At Rated VR, TL = 95C |
| Non-Repetitive Peak Surge Current | IFSM | 60 | A | Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz |
| Storage Temperature Range | Tstg | 55 to +150 | C | |
| Operating Junction Temperature | TJ | 55 to +125 | C | |
| Voltage Rate of Change | dv/dt | 10,000 | V/s | Rated VR, TJ = 25C |
| Thermal Resistance, Junction-to-Lead | RJL | 24 | C/W | Mounted with minimum recommended pad size, PC Board FR4. |
| Thermal Resistance, Junction-to-Ambient | RJA | 80 | C/W | 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. |
| Maximum Instantaneous Forward Voltage | VF | 0.51 (Typ.) / 0.63 (Max.) | V | iF = 1.0 A, TJ = 25C |
| Maximum Instantaneous Forward Voltage | VF | 0.475 (Typ.) / 0.55 (Max.) | V | iF = 2.0 A, TJ = 125C |
| Maximum Instantaneous Reverse Current | IR | 0.2 (Typ.) / 1.0 (Max.) | mA | VR = 60 V, TJ = 25C |
| Maximum Instantaneous Reverse Current | IR | 20 (Typ.) / 50 (Max.) | mA | VR = 60 V, TJ = 125C |
2410121943_onsemi-MBRS260T3G_C45363.pdf
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