AEC Q101 qualified triple diode onsemi BAS21TMR6T1G in compact SC 74 package for space saving designs
Key Attributes
Model Number:
BAS21TMR6T1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
625mA
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
250V
Diode Configuration:
3 Independent
Pd - Power Dissipation:
311mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21TMR6T1G
Package:
SC-74
Product Description
Product Overview
The BAS21TMR6 houses three high-voltage switching diodes in a SC-74 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. It offers reduced board space and is suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable. The devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant
- Material: Pb-Free, Halogen Free/BFR Free
- Package: SC-74
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
| MAXIMUM RATINGS (EACH DIODE) | ||||
| Reverse Voltage | VR | 250 | Vdc | |
| Forward Current | IF | 200 | mAdc | |
| Peak Forward Surge Current | IFM(surge) | 625 | mAdc | |
| THERMAL CHARACTERISTICS | ||||
| Total Device Dissipation FR-5 Board | PD | 311 | mW | TA = 25C; Derate above 25C: 2.5 mW/C |
| Thermal Resistance, Junction-to-Ambient FR-5 Board | RJA | 402 | C/W | |
| Total Device Dissipation Alumina Substrate | PD | 347 | mW | TA = 25C; Derate above 25C: 2.8 mW/C |
| Thermal Resistance, Junction-to-Ambient Alumina Substrate | RJA | 360 | C/W | |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | |
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | ||||
| Reverse Voltage Leakage Current (VR = 200 Vdc) | IR | - | 0.1 | µAdc |
| Reverse Voltage Leakage Current (VR = 200 Vdc, TJ = 150°C) | IR | - | 100 | µAdc |
| Reverse Breakdown Voltage (IBR = 100 µAdc) | V(BR) | 250 | Vdc | |
| Forward Voltage (IF = 100 mAdc) | VF | - | 1.0 | Vdc |
| Forward Voltage (IF = 200 mAdc) | VF | - | 1.25 | Vdc |
| Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | - | 5.0 | pF |
| Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100 Ω) | trr | - | 50 | ns |
2410121943_onsemi-BAS21TMR6T1G_C463210.pdf
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