P Channel MOSFET with Low RDS on and Optimized Switching NIKO SEM PM597BA in Compact SOT 23 Package
Key Attributes
Model Number:
PM597BA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
92pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
115pF@10V
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
8.7nC@4.5V
Mfr. Part #:
PM597BA
Package:
SOT-23
Product Description
Product Overview
The PM597BA is a P-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed with SOT-23(S) packaging. It offers low RDS(on) for minimized conduction losses and an optimized gate charge for reduced switching losses. This transistor is Pb-Free, Halogen-Free, and RoHS compliant, making it suitable for protection circuits and logic/load switch applications.
Product Attributes
- Brand: NIKO-SEM
- Package: SOT-23(S)
- Certifications: PbFree, Halogen Free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| PRODUCT SUMMARY | ||||
| V(BR)DSS | V(BR)DSS | -20 | V | |
| RDS(ON) | RDS(ON) | 30 | m | |
| ID | ID | -5.3 | A | |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current (TA = 25 C) | ID | TA = 25 C | -5.3 | A |
| Continuous Drain Current (TA = 70 C) | ID | TA = 70 C | -4.3 | A |
| Pulsed Drain Current | IDM | -16 | A | |
| Power Dissipation (TA = 25 C) | PD | TA = 25 C | 1.4 | W |
| Power Dissipation (TA = 70 C) | PD | TA = 70 C | 0.9 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -20 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -0.7 to -1.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = 12V | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -16V, VGS = 0V | -1 | A |
| Zero Gate Voltage Drain Current (TJ = 55 C) | IDSS | VDS = -10V, VGS = 0V, TJ = 55 C | -10 | A |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -2.5V, ID = -3.5A | 40 to 58 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -3.5A | 30 to 43 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -3.5A | 25 to 30 | m |
| Forward Transconductance | gfs | VDS = -5V, ID = -3.5A | 16 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = -10V, f = 1MHz | 801 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = -10V, f = 1MHz | 115 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -10V, f = 1MHz | 92 | pF |
| Total Gate Charge | Qg | VDS = -10V , VGS =-4.5V, ID = -3.5A | 8.7 | nC |
| Total Gate Charge | Qg | VDS = -10V , VGS =-2.5V, ID = -3.5A | 5.4 | nC |
| Gate-Source Charge | Qgs | VDS = -10V , VGS =-4.5V, ID = -3.5A | 1.2 | nC |
| Gate-Drain Charge | Qgd | VDS = -10V , VGS =-4.5V, ID = -3.5A | 2.6 | nC |
| Turn-On Delay Time | td(on) | VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6 | 19 | nS |
| Rise Time | tr | VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6 | 30 | nS |
| Turn-Off Delay Time | td(off) | VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6 | 55 | nS |
| Fall Time | tf | VDD = -10V, VGS = -4.5V ID -3.5A, RG = 6 | 20 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | -1 | A | |
| Forward Voltage | VSD | IF = -3.5A, VGS = 0V | -1.3 | V |
| Reverse Recovery Time | trr | IF = -3.5A, dlF/dt = 100A / S | 24 | nS |
| Reverse Recovery Charge | Qrr | IF = -3.5A, dlF/dt = 100A / S | 6 | nC |
2410121549_NIKO-SEM-PM597BA_C444869.pdf
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