Ultrafast switching diode onsemi MUR220RLG designed for in power rectification and inverter applications
Key Attributes
Model Number:
MUR220RLG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Reverse Leakage Current (Ir):
2uA@200V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
950mV@2A
Current - Rectified:
2A
Mfr. Part #:
MUR220RLG
Package:
DO-41
Product Description
Product Overview
The MUR220 is a state-of-the-art SWITCHMODE Power Rectifier designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features ultrafast 25 nanosecond recovery times, a high operating junction temperature of 175C, low forward voltage, and low leakage current. The device utilizes a high-temperature glass passivated junction and is available in Pb-Free versions.
Product Attributes
- Brand: ON Semiconductor
- Origin: Not specified
- Material: Epoxy, Molded (Case)
- Color: Not specified
- Certifications: Pb-Free Devices available
Technical Specifications
| Rating | Symbol | Value | Unit | Notes |
| Peak Repetitive Reverse Voltage | VRRM | 200 | V | Working Peak Reverse Voltage, DC Blocking Voltage |
| Average Rectified Forward Current | IF(AV) | 2.0 | A | @ TA = 90C (Square Wave Mounting Method #3 Per Note 3) |
| Non-Repetitive Peak Surge Current | IFSM | 35 | A | (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) |
| Operating Junction Temperature and Storage Temperature Range | TJ, Tstg | -65 to +175 | C | |
| Maximum Instantaneous Forward Voltage | VF | 0.75 / 0.95 | V | (IF = 2.0 Amp, TJ = 150C / 25C) |
| Maximum Instantaneous Reverse Current | iR | 50 / 2.0 | µA | (Rated dc Voltage, TJ = 150C / 25C) |
| Maximum Reverse Recovery Time | trr | 25 / 35 | ns | (IF = 0.5 Amp, IR = 1.0 Amp, IREC = 0.25 A / IF = 1.0 Amp, di/dt = 50 Amp/ µs) |
| Maximum Forward Recovery Time | tfr | 25 | ns | (IF = 1.0 A, di/dt = 100 A/ µs, IREC to 1.0 V) |
| Thermal Resistance, Junction-to-Ambient | R JA | 52-87 | °C/W | (See Note 3 for mounting methods) |
2410121938_onsemi-MUR220RLG_C112409.pdf
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