NIKO SEM PZ2N7002M N Channel MOSFET with Operating Temperature Range Minus 40 to 150 Degrees Celsius
Key Attributes
Model Number:
PZ2N7002M
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
1.7Ω@4.5V,100mA
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
36pF@25V
Pd - Power Dissipation:
140mW
Gate Charge(Qg):
1.6nC@10V
Mfr. Part #:
PZ2N7002M
Package:
SOT-23
Product Description
Product Overview
The PZ2N7002M is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It features Halogen-Free & Lead-Free compliance and ESD protection.
Product Attributes
- Brand: NIKO-SEM
- Package Type: SOT-23(S)
- Certifications: Halogen-Free & Lead-Free
- ESD Protection: Yes, 2KV HBM
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current | ID | TC = 25 ° C | 300 | mA |
| Continuous Drain Current | ID | TC = 100 ° C | 190 | mA |
| Pulsed Drain Current | IDM | 1 | A | |
| Power Dissipation | PD | TC = 25 ° C | 0.35 | W |
| Power Dissipation | PD | TC = 100 ° C | 0.14 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -40 to 150 | ° C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | TYPICAL | 350 | ° C / W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 100µA | 60 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 100µA | 1.0 - 1.8 - 2.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±16V | ±30 | µ A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 48V, VGS = 0V | 1 | µ A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40V, VGS = 0V, TJ = 125 ° C | 10 | µ A |
| On-State Drain Current | ID(ON) | VDS = 10V, VGS = 10V | 1 | A |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 3.5V, ID = 10mA | 2.1 - 5 | Ω |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 100mA | 1.7 - 3 | Ω |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 200mA | 1.6 - 2 | Ω |
| Forward Transconductance | gfs | VDS = 20V, ID = 200mA | 0.18 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 36 | pF |
| Output Capacitance | Coss | 10 | pF | |
| Reverse Transfer Capacitance | Crss | 6 | pF | |
| Total Gate Charge | Qg | VDS = 0.5V(BR)DSS, VGS = 10V, ID = 200mA | 1.6 | nC |
| Gate-Source Charge | Qgs | 0.2 | nC | |
| Gate-Drain Charge | Qgd | 1 | nC | |
| Turn-On Delay Time | td(on) | VDD = 30V, ID =200mA, RG=10Ω, VGS = 10V | 30 | ns |
| Turn-Off Delay Time | td(off) | 125 | ns | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | IF =200mA, VGS = 0V | 300 | mA |
| Forward Voltage | VSD | IF =200mA, VGS = 0V | 1.2 | V |
2411220530_NIKO-SEM-PZ2N7002M_C532987.pdf
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