NIKO-SEM PKC26BB N Channel Enhancement Mode Transistor with High Continuous Drain Current Capability
Key Attributes
Model Number:
PKC26BB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
151A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
408pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.499nF@15V
Pd - Power Dissipation:
29W
Gate Charge(Qg):
36nC@4.5V
Mfr. Part #:
PKC26BB
Package:
PDFN-8(5.8x4.9)
Product Description
Product Overview
The PKC26BB is a G-48-2 N-Channel Enhancement Mode Field Effect Transistor designed for protection and DC-to-DC converter applications. It offers low RDS(on) to minimize conduction losses and an optimized gate charge for reduced switching losses. This device is PbFree, Halogen Free, and RoHS compliant, featuring 100% UIS and Rg tested for enhanced reliability.
Product Attributes
- Brand: NIKO-SEM
- Model: PKC26BB
- Package: PDFN 5x6P
- Certifications: PbFree, Halogen Free, RoHS compliant
- Testing: 100% UIS Tested, 100% Rg Tested
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 151 | A |
| Continuous Drain Current | ID | TC = 100 °C | 95 | A |
| Pulsed Drain Current | IDM | 200 | A | |
| Continuous Drain Current | ID | TA = 25 °C | 36 | A |
| Continuous Drain Current | ID | TA = 70 °C | 28 | A |
| Avalanche Current | IAS | L = 0.1mH | 57 | A |
| Avalanche Energy | EAS | L = 0.1mH | 162 | mJ |
| Power Dissipation | PD | TC = 25 °C | 73 | W |
| Power Dissipation | PD | TC = 100 °C | 29 | W |
| Power Dissipation | PD | TA = 25 °C | 4.1 | W |
| Power Dissipation | PD | TA = 70 °C | 2.6 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient (t ≤10s) | RθJA | 30 | °C / W | |
| Junction-to-Ambient (Steady-State) | RθJA | 50 | °C / W | |
| Junction-to-Case (Steady-State) | RθJC | 1.7 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 1.6 - 2.35 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 20A | 1.6 - 2.3 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 20A | 1.1 - 1.6 | mΩ |
| Forward Transconductance | gfs | VDS = 5V, ID = 20A | 123 | S |
| DYNAMIC | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 3499 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 625 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 408 | pF |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.1 | Ω |
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 20A | 70 | nC |
| Gate-Source Charge | Qgs | VDS = 15V , VGS = 10V, ID = 20A | 9.2 | nC |
| Gate-Drain Charge | Qgd | VDS = 15V , VGS = 10V, ID = 20A | 17 | nC |
| Turn-On Delay Time | td(on) | VDS = 15V , ID & 20A, VGS = 10V, RGEN =6Ω | 20 | nS |
| Rise Time | tr | VDS = 15V , ID & 20A, VGS = 10V, RGEN =6Ω | 120 | nS |
| Turn-Off Delay Time | td(off) | VDS = 15V , ID & 20A, VGS = 10V, RGEN =6Ω | 97 | nS |
| Fall Time | tf | VDS = 15V , ID & 20A, VGS = 10V, RGEN =6Ω | 150 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 73 | A | |
| Forward Voltage | VSD | IF = 20A, VGS = 0V | 1 | V |
| Reverse Recovery Time | trr | IF = 20A, dlF/dt = 100A / µS | 28 | nS |
| Reverse Recovery Charge | Qrr | IF = 20A, dlF/dt = 100A / µS | 13 | nC |
2411220331_NIKO-SEM-PKC26BB_C440038.pdf
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