High Current NIKO-SEM PD616BA N Channel Enhancement Mode Field Effect Transistor with TO 252 Package
Key Attributes
Model Number:
PD616BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.35V
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 N-channel
Input Capacitance(Ciss):
821pF
Pd - Power Dissipation:
38W
Gate Charge(Qg):
17.2nC@10V
Mfr. Part #:
PD616BA
Package:
TO-252-2
Product Description
Product Overview
The PD616BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers a robust performance with key parameters like high drain-source voltage, low on-resistance, and significant continuous drain current capabilities. This transistor is Halogen-Free & Lead-Free, ensuring environmental compliance.
Product Attributes
- Brand: NIKO-SEM
- Model: PD616BA
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 °C | 55 | A | ||
| Continuous Drain Current | ID | TC = 100 °C | 35 | A | ||
| Pulsed Drain Current | IDM | 120 | A | |||
| Avalanche Current | IAS | 23 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 27 | mJ | ||
| Power Dissipation | PD | TC = 25 °C | 38 | W | ||
| Power Dissipation | PD | TC = 100 °C | 15 | W | ||
| Junction & Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Case | RθJC | 3.3 | °C / W | |||
| Junction-to-Ambient | RθJA | 62.5 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.35 | 1.7 | 3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 125 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | 7 | 9.5 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V , ID = 20A | 5.6 | 7 | mΩ | |
| Forward Transconductance | gfs | VDS = 5V, ID = 20A | 50 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 821 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 159 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 96 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 2.2 | Ω | ||
| Total Gate Charge | Qg | VDS = 15V , ID = 20A, VGS=10V | 17.2 | nC | ||
| Total Gate Charge | Qg | VDS = 15V , ID = 20A, VGS=4.5V | 9.2 | nC | ||
| Gate-Source Charge | Qgs | VDS = 15V , ID = 20A | 1.9 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 15V , ID = 20A | 5.2 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω | 27 | nS | ||
| Rise Time | tr | VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω | 23 | nS | ||
| Turn-Off Delay Time | td(off) | VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω | 51 | nS | ||
| Fall Time | tf | VDS = 15V ID & 20A, VGS = 10V, RGEN =6Ω | 24 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 55 | A | |||
| Forward Voltage | VSD | IF = 20A, VGS = 0V | 1.2 | V | ||
| Reverse Recovery Time | trr | IF = 20A, dlF/dt = 100A / µS | 8.6 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 20A, dlF/dt = 100A / µS | 1.7 | nC | ||
2411220200_NIKO-SEM-PD616BA_C429894.pdf
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