Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR
Key Attributes
Model Number:
FGHL60T120RWD
Product Custom Attributes
Pd - Power Dissipation:
833W
Td(off):
290ns
Td(on):
48ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
7.128nF@600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.9V@60mA
Gate Charge(Qg):
256nC
Operating Temperature:
-55℃~+175℃
Reverse Recovery Time(trr):
183ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
1.9mJ
Mfr. Part #:
FGHL60T120RWD
Package:
TO-247
Product Description
Product Overview
The FGHL60T120RWD is an N-Channel, Field Stop VII (FS7) IGBT with an integrated SCR in a TO247-3L package. Utilizing novel field stop 7th generation IGBT technology and Gen7 Diode, it offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation. It is suitable for applications such as motor control, UPS, data center, and high-power switching.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-to-Emitter Voltage | VCES | 1200 | V | |
| Gate-to-Emitter Voltage | VGES | ±20 | V | |
| Transient Gate-to-Emitter Voltage | ±30 | V | ||
| Collector Current | IC | 120 | A | TC = 25°C (Note 1) |
| Collector Current | IC | 60 | A | TC = 100°C |
| Power Dissipation | PD | 833 | W | TC = 25°C |
| Power Dissipation | PD | 416 | W | TC = 100°C |
| Pulsed Collector Current | ICM | 180 | A | TC = 25°C, tp = 10 µs (Note 2) |
| Diode Forward Current | IF | 120 | A | TC = 25°C (Note 1) |
| Diode Forward Current | IF | 60 | A | TC = 100°C |
| Pulsed Diode Maximum Forward Current | IFM | 180 | A | TC = 25°C, tp = 10 µs |
| Short Circuit Withstand Time | TSC | 5 | µs | VGE = 15 V, VCC = 600 V, TC = 150°C |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C | |
| Lead Temperature for Soldering Purposes | TL | 260 | °C | |
| Collector-to-Emitter Breakdown Voltage | BVCES | 1200 | V | VGE = 0 V, IC = 5 mA |
| Collector-to-Emitter Breakdown Voltage Temperature Coefficient | 1225 | mV/°C | ||
| Zero Gate Voltage Collector Current | ICES | 40 | µA | VGE = 0 V, VCE = VCES |
| Gate-to-Emitter Leakage Current | IGES | ±400 | nA | VGE = 20 V, VCE = 0 V |
| Gate Threshold Voltage | VGE(th) | 4.9 - 6.7 | V | VGE = VCE, IC = 60 mA, TJ = 25°C |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | 1.2 - 1.8 | V | VGE = 15 V, IC = 60 A, TJ = 25°C |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | 1.81 | V | VGE = 15 V, IC = 60 A, TJ = 175°C |
| Input Capacitance | Cies | 7128 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 252 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 25.3 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Total Gate Charge | Qg | 256 | nC | VCE = 600 V, VGE = 15 V, IC = 60 A |
| Gate-to-Emitter Charge | Qge | 64.1 | nC | VCE = 600 V, VGE = 15 V, IC = 60 A |
| Gate-to-Collector Charge | Qgc | 102 | nC | VCE = 600 V, VGE = 15 V, IC = 60 A |
| Turn-on Delay Time | td(on) | 48 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-off Delay Time | td(off) | 290 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Rise Time | tr | 30 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Fall Time | tf | 138 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-on Switching Loss | Eon | 1.9 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-off Switching Loss | Eoff | 1.8 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Total Switching Loss | Ets | 3.7 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-on Delay Time | td(on) | 51 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-off Delay Time | td(off) | 250 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Rise Time | tr | 64 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Fall Time | tf | 139 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-on Switching Loss | Eon | 4.5 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-off Switching Loss | Eoff | 3.4 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Total Switching Loss | Ets | 8.0 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C |
| Turn-on Delay Time | td(on) | 45 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-off Delay Time | td(off) | 328 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Rise Time | tr | 35 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Fall Time | tf | 228 | ns | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-on Switching Loss | Eon | 3.3 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-off Switching Loss | Eoff | 2.4 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Total Switching Loss | Ets | 5.7 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-on Delay Time | td(on) | 52 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-off Delay Time | td(off) | 296 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Rise Time | tr | 68 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Fall Time | tf | 224 | ns | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-on Switching Loss | Eon | 6.9 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Turn-off Switching Loss | Eoff | 5.1 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Total Switching Loss | Ets | 12.0 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C |
| Forward Voltage | VF | 1.46 - 2.08 | V | IF = 60 A, TJ = 25°C |
| Forward Voltage | VF | 1.7 | V | IF = 60 A, TJ = 175°C |
| Reverse Recovery Time | trr | 183 | ns | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Reverse Recovery Charge | Qrr | 1815 | nC | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Reverse Recovery Energy | EREc | 0.5 | mJ | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Peak Reverse Recovery Current | IRRM | 19.9 | A | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Reverse Recovery Time | trr | 257 | ns | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Reverse Recovery Charge | Qrr | 2651 | nC | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Reverse Recovery Energy | EREc | 0.9 | mJ | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Peak Reverse Recovery Current | IRRM | 20.6 | A | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C |
| Reverse Recovery Time | trr | 279 | ns | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Reverse Recovery Charge | Qrr | 4008 | nC | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Reverse Recovery Energy | EREc | 1.4 | mJ | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Peak Reverse Recovery Current | IRRM | 28.7 | A | VR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Reverse Recovery Time | trr | 420 | ns | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Reverse Recovery Charge | Qrr | 6392 | nC | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Reverse Recovery Energy | EREc | 2.5 | mJ | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Peak Reverse Recovery Current | IRRM | 30.3 | A | VR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C |
| Thermal Resistance, Junction-to-Case for IGBT | R JC | 0.18 | °C/W | |
| Thermal Resistance, Junction-to-Case for Diode | R JCD | 0.33 | °C/W | |
| Thermal Resistance, Junction-to-Ambient | R JA | 40 | °C/W |
2504211431_onsemi-FGHL60T120RWD_C22969010.pdf
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