IGBT onsemi AFGHL75T65SQDC 650 Volt 75 Amp with 4th Generation Field Stop and High Current Capability
Key Attributes
Model Number:
AFGHL75T65SQDC
Product Custom Attributes
Td(off):
107ns
Pd - Power Dissipation:
375W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11.2pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.4V@75mA
Gate Charge(Qg):
139nC@15V
Operating Temperature:
-55℃~+175℃@(Tj)
Switching Energy(Eoff):
1.11mJ
Turn-On Energy (Eon):
1.68mJ
Input Capacitance(Cies):
4.574nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
289.4pF
Mfr. Part #:
AFGHL75T65SQDC
Package:
TO-247-3L
Product Description
Product Overview
The AFGHL75T65SQDC is a 650 V, 75 A IGBT featuring novel field stop 4th generation IGBT technology and 1.5th generation SiC Schottky Diode technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in applications such as totem pole bridgeless PFC and Inverter. Its features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AECQ101 Qualified and PPAP Capable
Technical Specifications
| Rating | Symbol | Value Unit | Conditions |
| Collector-to-Emitter Voltage | VCES | 650 V | |
| Gate-to-Emitter Voltage | VGES | 20 V | |
| Transient Gate-to-Emitter Voltage | 30 V | ||
| Collector Current | IC | 80 A | @ TC = 25C |
| Collector Current | IC | 75 A | @ TC = 100C |
| Pulsed Collector Current | ILM | 300 A | (Note 2) |
| Pulsed Collector Current | ICM | 300 A | (Note 3) |
| Diode Forward Current | IF | 35 A | @ TC = 25C |
| Diode Forward Current | IF | 20 A | @ TC = 100C |
| Pulsed Diode Maximum Forward Current | IFM | 200 A | |
| Maximum Power Dissipation | PD | 375 W | @ TC = 25C |
| Maximum Power Dissipation | PD | 188 W | @ TC = 100C |
| Operating Junction / Storage Temperature Range | TJ, TSTG | 55 to +175 C | |
| Maximum Lead Temp. for Soldering Purposes | TL | 265 C | 1/8 from case for 10 seconds |
| Collector-emitter breakdown voltage | BVCES | 650 V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES / TJ | 0.6 V/C | VGE = 0 V, IC = 1 mA |
| Collector-emitter cut-off current | ICES | 250 A | VGE = 0 V, VCE = 650 V |
| Gate leakage current | IGES | 400 nA | VGE = 20 V, VCE = 0 V |
| Gate-emitter threshold voltage | VGE(th) | 3.4 - 6.4 V | VGE = VCE, IC = 75 mA |
| Collector-emitter saturation voltage | VCE(sat) | 1.6 V (Typ.) | VGE = 15 V, IC = 75 A |
| Collector-emitter saturation voltage | VCE(sat) | 2.0 - 2.1 V | VGE = 15 V, IC = 75 A, TJ = 175C |
| Input capacitance | Cies | 4574 pF (Typ.) | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output capacitance | Coes | 289.4 pF (Typ.) | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse transfer capacitance | Cres | 11.2 pF (Typ.) | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate charge total | Qg | 139 nC (Typ.) | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-emitter charge | Qge | 25 nC (Typ.) | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-collector charge | Qgc | 33 nC (Typ.) | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Turn-on delay time | td(on) | 22.4 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Rise time | tr | 19.2 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-off delay time | td(off) | 116.8 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Fall time | tf | 9.6 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-on switching loss | Eon | 0.48 mJ (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-off switching loss | Eoff | 0.24 mJ (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Total switching loss | Ets | 0.72 mJ (Typ.) | TC = 25C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-on delay time | td(on) | 24 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Rise time | tr | 49.6 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-off delay time | td(off) | 107.2 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Fall time | tf | 70.4 ns (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-on switching loss | Eon | 1.68 mJ (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-off switching loss | Eoff | 1.11 mJ (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Total switching loss | Ets | 2.79 mJ (Typ.) | TC = 25C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-on delay time | td(on) | 20.8 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Rise time | tr | 22.4 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-off delay time | td(off) | 130 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Fall time | tf | 9.6 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-on switching loss | Eon | 0.53 mJ (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-off switching loss | Eoff | 0.44 mJ (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Total switching loss | Ets | 0.98 mJ (Typ.) | TC = 175C, VCC = 400 V, IC = 37.5 A, RG = 4.7 , VGE = 15 V |
| Turn-on delay time | td(on) | 24 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Rise time | tr | 49.6 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-off delay time | td(off) | 118 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Fall time | tf | 78.4 ns (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-on switching loss | Eon | 1.76 mJ (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Turn-off switching loss | Eoff | 1.42 mJ (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Total switching loss | Ets | 3.19 mJ (Typ.) | TC = 175C, VCC = 400 V, IC = 75 A, RG = 4.7 , VGE = 15 V |
| Forward Voltage | VF | 1.45 - 1.75 V | IF = 20 A |
| Forward Voltage | VF | 1.80 V (Typ.) | IF = 20 A, TJ = 175C |
| Total Capacitance | C | 110 pF (Typ.) | VR = 400 V, f = 1 MHz |
| Total Capacitance | C | 105 pF (Typ.) | VR = 600 V, f = 1 MHz |
| Thermal resistance junction-to-case (IGBT) | R JC | 0.4 C/W | |
| Thermal resistance junction-to-case (Diode) | R JC | 1.55 C/W | |
| Thermal resistance junction-to-ambient | R JA | 40 C/W |
2410010101_onsemi-AFGHL75T65SQDC_C2902241.pdf
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