Power transistor onsemi FGH75T65SHDT-F155 650V 75A field stop IGBT for UPS ESS and PFC applications
Key Attributes
Model Number:
FGH75T65SHDT-F155
Product Custom Attributes
Pd - Power Dissipation:
455W
Td(off):
86ns
Td(on):
28ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
43pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@75mA
Gate Charge(Qg):
123nC@15V
Operating Temperature:
-55℃~+175℃
Reverse Recovery Time(trr):
76ns
Switching Energy(Eoff):
750uJ
Turn-On Energy (Eon):
3mJ
Input Capacitance(Cies):
3.68nF
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
179pF
Mfr. Part #:
FGH75T65SHDT-F155
Package:
TO-247-3
Product Description
Product Overview
The FGH75T65SHDT is a 650 V, 75 A Field Stop Trench IGBT utilizing novel field stop technology. It offers optimum performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are essential. Key advantages include a high maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and tight parameter distribution.
Product Attributes
- Brand: ON Semiconductor
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 650 | V | |||
| VGES | Gate to Emitter Voltage | ±20 | V | |||
| IC | Collector Current @ TC = 25°C | 150 | A | |||
| IC | Collector Current @ TC = 100°C | 75 | A | |||
| ILM(1) | Pulsed Collector Current @ TC = 25°C | 225 | A | |||
| ICM(2) | Pulsed Collector Current | 225 | A | |||
| IF | Diode Forward Current @ TC = 25°C | 125 | A | |||
| IF | Diode Forward Current @ TC = 100°C | 75 | A | |||
| IFM(2) | Pulsed Diode Maximum Forward Current | 225 | A | |||
| PD | Maximum Power Dissipation @ TC = 25°C | 455 | W | |||
| PD | Maximum Power Dissipation @ TC = 100°C | 227 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | °C | ||
| Tstg | Storage Temperature Range | -55 | +175 | °C | ||
| TL | Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | 300 | °C | |||
| Electrical Characteristics of the IGBT | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 1 mA | 650 | - | - | V |
| ΔBVCES / ΔTJ | Temperature Coefficient of Breakdown Voltage | IC = 1 mA, Reference to 25°C | - | 0.6 | - | V/°C |
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0 V | - | - | 250 | µA |
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| VGE(th) | G-E Threshold Voltage | IC = 75 mA, VCE = VGE | 4.0 | 5.5 | 7.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 75 A, VGE = 15 V | - | 1.6 | 2.1 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 75 A, VGE = 15 V, TC = 175°C | - | 2.28 | - | V |
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1MHz | - | 3680 | - | pF |
| Coes | Output Capacitance | - | 179 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 43 | - | pF | |
| td(on) | Turn-On Delay Time | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 28 | - | ns |
| tr | Rise Time | - | 61 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 86 | - | ns | |
| tf | Fall Time | - | 16 | - | ns | |
| Eon | Turn-On Switching Loss | - | 3 | - | mJ | |
| Eoff | Turn-Off Switching Loss | - | 0.75 | - | mJ | |
| Ets | Total Switching Loss | - | 3.75 | - | mJ | |
| td(on) | Turn-On Delay Time | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C | - | 27 | - | ns |
| tr | Rise Time | - | 62 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 93 | - | ns | |
| tf | Fall Time | - | 16 | - | ns | |
| Eon | Turn-On Switching Loss | - | 4.7 | - | mJ | |
| Eoff | Turn-Off Switching Loss | - | 1.03 | - | mJ | |
| Ets | Total Switching Loss | - | 5.73 | - | mJ | |
| Qg | Total Gate Charge | VCE = 400 V, IC = 75 A, VGE = 15 V | - | 123 | - | nC |
| Qge | Gate to Emitter Charge | - | 22.6 | - | nC | |
| Qgc | Gate to Collector Charge | - | 44.9 | - | nC | |
| Electrical Characteristics of the Diode | ||||||
| VFM | Diode Forward Voltage | IF = 75 A, TC = 25°C | - | 1.8 | 2.1 | V |
| VFM | Diode Forward Voltage | IF = 75 A, TC = 175°C | - | 1.7 | - | V |
| Erec | Reverse Recovery Energy | IF =75 A, dIF/dt = 200 A/µs, TC = 175°C | - | 160 | - | µJ |
| trr | Diode Reverse Recovery Time | TC = 25°C | - | 76 | - | ns |
| trr | Diode Reverse Recovery Time | TC = 175°C | - | 270 | - | ns |
| Qrr | Diode Reverse Recovery Charge | TC = 25°C | - | 206 | - | nC |
| Qrr | Diode Reverse Recovery Charge | TC = 175°C | - | 2199 | - | nC |
| Thermal Characteristics | ||||||
| RθJC(IGBT) | Thermal Resistance, Junction to Case, Max. | 0.33 | °C/W | |||
| RθJC(Diode) | Thermal Resistance, Junction to Case, Max. | 0.65 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient, Max. | 40 | °C/W | |||
| Package Marking and Ordering Information | ||||||
| Part Number | Top Mark | Package | Packing Method | Reel Size | Tape Width | Quantity |
| FGH75T65SHDT-155 | FGH75T65SHDT | TO-247 | Tube | - | - | 30 |
2411220036_onsemi-FGH75T65SHDT-F155_C462126.pdf
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